SI7962DP-T1-E3

SI7962DP-T1-E3
Mfr. #:
SI7962DP-T1-E3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
Lifecycle:
New from this manufacturer.
Datasheet:
SI7962DP-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Vishay Siliconix
Product Category
FETs - Arrays
Series
TrenchFETR
Packaging
Digi-ReelR Alternate Packaging
Part-Aliases
SI7962DP-E3
Unit-Weight
0.017870 oz
Mounting-Style
SMD/SMT
Package-Case
PowerPAKR SO-8 Dual
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
2 Channel
Supplier-Device-Package
PowerPAKR SO-8 Dual
Configuration
Dual
FET-Type
2 N-Channel (Dual)
Power-Max
1.4W
Transistor-Type
2 N-Channel
Drain-to-Source-Voltage-Vdss
40V
Input-Capacitance-Ciss-Vds
-
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
7.1A
Rds-On-Max-Id-Vgs
17 mOhm @ 11.1A, 10V
Vgs-th-Max-Id
4.5V @ 250μA
Gate-Charge-Qg-Vgs
70nC @ 10V
Pd-Power-Dissipation
1.4 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
15 ns
Rise-Time
15 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
7.1 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Rds-On-Drain-Source-Resistance
17 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
55 ns
Typical-Turn-On-Delay-Time
22 ns
Channel-Mode
Enhancement
Tags
SI7962, SI796, SI79, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET 2N-CH 40V 7.1A PPAK SO-8
***ark
Transistor; Continuous Drain Current, Id:11100mA; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:4.5V; Power Dissipation, Pd:1.4W ;RoHS Compliant: Yes
Part # Mfg. Description Stock Price
SI7962DP-T1-E3
DISTI # SI7962DP-T1-E3TR-ND
Vishay SiliconixMOSFET 2N-CH 40V 7.1A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.8873
SI7962DP-T1-E3
DISTI # 781-SI7962DP-T1-E3
Vishay IntertechnologiesMOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
RoHS: Compliant
0
  • 3000:$1.7200
Image Part # Description
SI7962DP-T1-E3

Mfr.#: SI7962DP-T1-E3

OMO.#: OMO-SI7962DP-T1-E3

MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
SI7962DP-T1-GE3

Mfr.#: SI7962DP-T1-GE3

OMO.#: OMO-SI7962DP-T1-GE3

MOSFET 40V 11.1A 3.5W 17mohm @ 10V
SI7962DP-T1-GE3

Mfr.#: SI7962DP-T1-GE3

OMO.#: OMO-SI7962DP-T1-GE3-317

RF Bipolar Transistors MOSFET 40V 11.1A 3.5W 17mohm @ 10V
SI7962DP-T1-E3

Mfr.#: SI7962DP-T1-E3

OMO.#: OMO-SI7962DP-T1-E3-VISHAY

RF Bipolar Transistors MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
Availability
Stock:
Available
On Order:
3000
Enter Quantity:
Current price of SI7962DP-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.58
$2.58
10
$2.45
$24.51
100
$2.32
$232.20
500
$2.19
$1 096.50
1000
$2.06
$2 064.00
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