APTGF50VDA120T3G

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

IGBT Modules

RoHS:

Y

Product:

IGBT Silicon Modules

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

1.2 kV

Collector-Emitter Saturation Voltage:

3.2 V

Continuous Collector Current at 25 C:

70 A

Gate-Emitter Leakage Current:

100 nA

Pd - Power Dissipation:

312 W

Package / Case:

SP-3

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 150 C

Height:

11.5 mm

Length:

73.4 mm

Operating Temperature Range:

- 40 C to + 150 C

Width:

40.8 mm

Brand:

Microchip / Microsemi

Mounting Style:

Chassis Mount

Maximum Gate Emitter Voltage:

20 V

Product Type:

IGBT Modules

Factory Pack Quantity:

50

Subcategory:

IGBTs

Tags

APTGF5, APTGF, APTG, APT