We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| FGB5N60UNDF DISTI # V36:1790_06338232 | ON Semiconductor | 600V 5A NPT IGBT | 0 |
|
| FGB5N60UNDF DISTI # FGB5N60UNDF-ND | ON Semiconductor | IGBT 600V 10A 73.5W D2PAK Min Qty: 800 Container: Tube | Temporarily Out of Stock |
|
| FGB5N60UNDF DISTI # 26733835 | ON Semiconductor | 600V 5A NPT IGBT | 2400 |
|
| FGB5N60UNDF DISTI # FGB5N60UNDF | ON Semiconductor | Trans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail - Tape and Reel (Alt: FGB5N60UNDF) RoHS: Compliant Min Qty: 800 Container: Reel | Americas - 0 | |
| FGB5N60UNDF DISTI # FGB5N60UNDF | ON Semiconductor | Trans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail - Bulk (Alt: FGB5N60UNDF) Min Qty: 368 Container: Bulk | Americas - 0 |
|
| FGB5N60UNDF DISTI # 57AC1890 | ON Semiconductor | IGBT, SINGLE, 600V, 10A, TO-263AB,DC Collector Current:10A,Collector Emitter Saturation Voltage Vce(on):1.9V,Power Dissipation Pd:73.5W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-263AB,No. of Pins:3Pins,RoHS Compliant: Yes RoHS: Compliant | 675 |
|
| FGB5N60UNDF DISTI # 95T0027 | ON Semiconductor | IGBT, 600V, 5A, Short Circuit Rated / REEL RoHS: Not Compliant | 0 |
|
| FGB5N60UNDF DISTI # 512-FGB5N60UNDF | ON Semiconductor | IGBT Transistors 600V 5A NPT IGBT RoHS: Compliant | 2160 |
|
| FGB5N60UNDF | ON Semiconductor | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant | 1600 |
|
| FGB5N60UNDF | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant | 73530 |
|
| FGB5N60UNDF | Fairchild Semiconductor Corporation | 1250 | ||
| FGB5N60UNDF | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant | Europe - 800 | |
| FGB5N60UNDF DISTI # 2860234 | ON Semiconductor | IGBT, SINGLE, 600V, 10A, TO-263AB RoHS: Compliant | 705 |
|
| FGB5N60UNDF DISTI # 2860234RL | ON Semiconductor | IGBT, SINGLE, 600V, 10A, TO-263AB RoHS: Compliant | 0 |
|
| FGB5N60UNDF DISTI # 2860234 | ON Semiconductor | IGBT, SINGLE, 600V, 10A, TO-263AB RoHS: Compliant | 675 |
|
| Image | Part # | Description |
|---|---|---|
|
|
Mfr.#: FGB5N60UNDF OMO.#: OMO-FGB5N60UNDF |
IGBT Transistors 600V 5A NPT IGBT |
|
|
Mfr.#: FGB5N60UNDF |
IGBT Transistors 600V 5A NPT IGBT |
|
Mfr.#: FGB50N33 OMO.#: OMO-FGB50N33-1190 |
New and Original |
|
Mfr.#: FGB50N33BT OMO.#: OMO-FGB50N33BT-1190 |
New and Original |