ZXTP2012ASTOA

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

E-Line-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

60 V

Collector- Base Voltage VCBO:

100 V

Emitter- Base Voltage VEBO:

7 V

Maximum DC Collector Current:

3.5 A

Gain Bandwidth Product fT:

120 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

ZXTN20

DC Current Gain hFE Max:

100 at 10 mA, 1 V

Height:

4.01 mm

Length:

4.77 mm

Width:

2.41 mm

Brand:

Diodes Incorporated

Pd - Power Dissipation:

1000 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2000

Subcategory:

Transistors

Tags

ZXTP2012A, ZXTP2012, ZXTP201, ZXTP20, ZXTP2, ZXTP, ZXT