We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
モデル | メーカー | 説明 | ストック | 価格 |
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IGO60R070D1AUMA1 DISTI # V72:2272_22710690 | Infineon Technologies AG | IGO60R070D1AUMA1 | 0 | |
IGO60R070D1AUMA1 DISTI # V36:1790_22710690 | Infineon Technologies AG | IGO60R070D1AUMA1 | 0 |
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IGO60R070D1AUMA1 DISTI # IGO60R070D1AUMA1CT-ND | Infineon Technologies AG | IC GAN FET 600V 60A 20DSO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 716In Stock |
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IGO60R070D1AUMA1 DISTI # IGO60R070D1AUMA1DKR-ND | Infineon Technologies AG | IC GAN FET 600V 60A 20DSO RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 716In Stock |
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IGO60R070D1AUMA1 DISTI # IGO60R070D1AUMA1TR-ND | Infineon Technologies AG | IC GAN FET 600V 60A 20DSO RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | Temporarily Out of Stock |
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IGO60R070D1AUMA1 DISTI # SP001300362 | Infineon Technologies AG | Trans MOSFET N-CH 600V 31A 20-Pin PG-DSO T/R (Alt: SP001300362) RoHS: Compliant Min Qty: 800 Container: Tape and Reel | Europe - 100 |
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IGO60R070D1AUMA1/SAMPLE DISTI # IGO60R070D1AUMA1/SAMPLE | Infineon Technologies AG | Transistor MOSFET Enhancement Mode 600V 20-Pin DSO - Trays (Alt: IGO60R070D1AUMA1/SAMPLE) RoHS: Compliant Min Qty: 800 Container: Tray | Americas - 5 | |
IGO60R070D1AUMA1 DISTI # IGO60R070D1AUMA1 | Infineon Technologies AG | Trans MOSFET N-CH 600V 31A 20-Pin PG-DSO T/R - Tape and Reel (Alt: IGO60R070D1AUMA1) RoHS: Compliant Min Qty: 800 Container: Reel | Americas - 0 |
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IGO60R070D1AUMA1 DISTI # 84AC1770 | Infineon Technologies AG | MOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes | 974 |
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IGO60R070D1AUMA1 DISTI # 726-IGO60R070D1AUMA1 | Infineon Technologies AG | MOSFET 600V CoolGaN Power Transistor RoHS: Compliant | 0 |
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IGO60R070D1AUMA1 DISTI # IGO60R070D1AUMA1 | Infineon Technologies AG | Transistor: N-JFET,CoolGaN™,unipolar,600V,31A,Idm:60A,125W | 5 |
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IGO60R070D1AUMA1 DISTI # 2981531 | Infineon Technologies AG | MOSFET, N-CH, 600V, 31A, 150DEG C, 125W RoHS: Compliant | 974 |
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IGO60R070D1AUMA1 DISTI # 2981531 | Infineon Technologies AG | MOSFET, N-CH, 600V, 31A, 150DEG C, 125W | 954 |
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画像 | モデル | 説明 |
---|---|---|
Mfr.#: IGO60R070D1AUMA1 OMO.#: OMO-IGO60R070D1AUMA1 |
MOSFET 600V CoolGaN Power Transistor | |
Mfr.#: IGO60R070D1AUMA1 |
IC GAN FET 600V 60A 20DSO |