IRF6613TR1

Mfr. #:: IRF6613TR1
メーカー:: Infineon Technologies
説明:: MOSFET N-CH 40V 23A DIRECTFET
ライフサイクル:: メーカー新製品
データシート:: IRF6613TR1 データシート
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HTML Datasheet:: IRF6613TR1 Datasheet IRF6613TR1 Datasheet (P4-P6)IRF6613TR1 Datasheet (P7-P9)
ECAD Model:

製品属性
属性値

メーカー: IR

製品カテゴリ: FET-シングル

Tags: IRF6613, IRF661, IRF66, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6613TR1 説明

***ied Electronics & Automation: A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT packag

***ical: Trans MOSFET N-CH Si 40V 23A 7-Pin Direct-FET MT T/R

***et Europe: Trans MOSFET N-CH 40V 23A 7-Pin Direct-FET MT T/R

***i-Key: MOSFET N-CH 40V 23A DIRECTFET

***ark: MOSFET, N, DIRECTFET, MT; Transistor type:MOSFET; Voltage, Vds typ:40V; Current, Id cont:23A; Resistance, Rds on:3.4mohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:2.25V; Case style:MT; Capacitance, Ciss typ:5950pF; RoHS Compliant: Yes

***ernational Rectifier: A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active ORýing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in

***nell: MOSFET, N, DIRECTFET, MT; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:23A; Resistance, Rds On:3.4mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:MT; Termination Type:SMD; Current, Idm Pulse:180A; External Depth:6.35mm; External Length / Height:0.7mm; Power Dissipation:2.8W; Power, Pd:2.8W; SMD Marking:6613; Temperature, Tj Max:150°C; Temperature, Tj Min:-40°C; Time, trr Typ:38ns; Typ Capacitance Ciss:5950pF; Voltage, Vds:40V; Voltage, Vds Max:40V; Width, External:5.05mm

Market price

モデル	メーカー	説明	ストック	価格
IRF6613TR1 DISTI # IRF6613TR1TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 23A DIRECTFET RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6613TR1 DISTI # IRF6613TR1CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 23A DIRECTFET RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6613TR1PBF DISTI # IRF6613TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 40V 23A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6613TR1PBF DISTI # IRF6613TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 40V 23A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6613TR1PBF DISTI # IRF6613TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 23A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6613TR1PBF DISTI # 70018824	Infineon Technologies AG	40V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE,DIRECTFET MT PKG RoHS: Compliant	0	1000:$2.4100 2000:$2.2100
IRF6613TR1 DISTI # 942-IRF6613TR1	Infineon Technologies AG	MOSFET 40V N-CH HEXFET 3.4mOhms 42nC RoHS: Not compliant	0
IRF6613TR1PBF DISTI # 942-IRF6613TR1PBF	Infineon Technologies AG	MOSFET MOSFT 40V 150A 3.4mOhm 42nC Qg RoHS: Compliant	0
IRF6613TR1	TT Electronics Resistors	MOSFET Transistor, N-Channel, SMT	678	322:$1.4400 112:$1.5600 1:$3.6000
IRF6613TR1PBF	International Rectifier	RoHS: Compliant	Europe - 800
IRF6613TR1			1724
IRF6613TR1PBF DISTI # 1436911	Infineon Technologies AG	MOSFET, N, DIRECTFET, 40V, MT RoHS: Compliant	0	1:$4.2400 10:$3.9700 100:$3.6000 250:$3.4700 500:$3.2900 1000:$3.2900 2000:$3.1800 5000:$3.0300

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