SIB452DK-T1-GE3

Mfr. #:: SIB452DK-T1-GE3
メーカー:: Vishay
説明:: MOSFET N-CH 190V 1.5A SC75-6
ライフサイクル:: メーカー新製品
データシート:: SIB452DK-T1-GE3 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SIB452DK-GE3

単位重量: 0.003386 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: PowerPAKR SC-75-6L

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: PowerPAKR SC-75-6L Single

構成: シングルクワッドドレインデュアルソース

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 13W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 190V

入力-静電容量-Ciss-Vds: 135pF @ 50V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 1.5A (Tc)

Rds-On-Max-Id-Vgs: 2.4 Ohm @ 500mA, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

ゲートチャージ-Qg-Vgs: 6.5nC @ 10V

Pd-電力損失: 2.4 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 15 ns

立ち上がり時間: 16 ns

Vgs-Gate-Source-Voltage: 16 V

Id-連続-ドレイン-電流: 670 mA

Vds-ドレイン-ソース-ブレークダウン-電圧: 190 V

Rds-On-Drain-Source-Resistance: 2.4 Ohms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 30 ns

典型的なターンオン遅延時間: 12 ns

チャネルモード: 強化

Tags: SIB452DK, SIB452, SIB45, SIB4, SIB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIB452DK-T1-GE3 説明

***ied Electronics & Automation: SIB452DK-T1-GE3 N-channel MOSFET Transistor; 0.67 A; 190 V; 6-Pin SC-75

***Components: Supplied as a Tape, N-Channel MOSFET, 670 mA, 190 V, 6-Pin SC-75 Vishay SIB452DK-T1-GE3

***ure Electronics: Single N-Channel 190 V 2.4 Ohms Surface Mount Power Mosfet - PowerPAK SC-75-6L

***et Europe: Trans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R

***ical: Trans MOSFET N-CH 190V 1.5A 6-Pin PowerPAK SC-75 T/R

***i-Key: MOSFET N-CH 190V 1.5A SC75-6

***ronik: N-CH.-FET 1,5A 190V PPAK SC75-6

***: N-CHANNEL 190-V

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:670Ma; Drain Source Voltage Vds:190V; On Resistance Rds(On):1.8Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:13W; No. Of Pins:6Pins Rohs Compliant: No

***nell: MOSFET, N-CH, 190V, 1.5A, PPAKSC75; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:190V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:13W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC75; No. of Pins:6; MSL:MSL 1 - Unlimited

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 190V, 1.5A, PPAKSC75; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:190V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:13W; Transistor Case Style:PowerPAK SC75; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C

Market price

モデル	メーカー	説明	ストック	価格
SIB452DK-T1-GE3 DISTI # V72:2272_09216871	Vishay Intertechnologies	Trans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R RoHS: Compliant	2000	1000:$0.2844 500:$0.3444 250:$0.3958 100:$0.4002 25:$0.4638 10:$0.5153 1:$0.6108
SIB452DK-T1-GE3 DISTI # SIB452DK-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 190V 1.5A SC75-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	19310In Stock	1000:$0.3626 500:$0.4532 100:$0.6118 10:$0.7930 1:$0.9100
SIB452DK-T1-GE3 DISTI # SIB452DK-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 190V 1.5A SC75-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	19310In Stock	1000:$0.3626 500:$0.4532 100:$0.6118 10:$0.7930 1:$0.9100
SIB452DK-T1-GE3 DISTI # SIB452DK-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 190V 1.5A SC75-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	18000In Stock	3000:$0.3190
SIB452DK-T1-GE3 DISTI # 30571749	Vishay Intertechnologies	Trans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R RoHS: Compliant	2000	1000:$0.2844 500:$0.3444 250:$0.3958 100:$0.4002 26:$0.4638
SIB452DK-T1-GE3 DISTI # SIB452DK-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R (Alt: SIB452DK-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 50	3000:€0.4799 6000:€0.3269 12000:€0.2819 18000:€0.2599 30000:€0.2419
SIB452DK-T1-GE3 DISTI # SIB452DK-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R - Tape and Reel (Alt: SIB452DK-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2829 6000:$0.2749 12000:$0.2639 18000:$0.2559 30000:$0.2489
SIB452DK-T1-GE3 DISTI # SIB452DK-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R (Alt: SIB452DK-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIB452DK-T1-GE3 DISTI # 19X1929	Vishay Intertechnologies	MOSFET Transistor, N Channel, 1.5 A, 190 V, 1.8 ohm, 4.5 V, 1.5 V , RoHS Compliant: Yes	2780	1:$0.8000 10:$0.6380 25:$0.5870 50:$0.5360 100:$0.4850 250:$0.4430 500:$0.4000 1000:$0.3200
SIB452DK-T1-GE3. DISTI # 28AC2101	Vishay Intertechnologies	N-CH PPAKSC75 190V 2.4 OHM @ 4.5V , ROHS COMPLIANT: NO	0	1:$0.2830 6000:$0.2750 12000:$0.2640 18000:$0.2560 30000:$0.2490
SIB452DK-T1-GE3 DISTI # 70616558	Vishay Siliconix	SIB452DK-T1-GE3 N-channel MOSFET Transistor,0.67 A,190 V,6-Pin SC-75 RoHS: Compliant	0	300:$0.4200 600:$0.3700 1500:$0.3400 3000:$0.2900
SIB452DK-T1-GE3 DISTI # 781-SIB452DK-T1-GE3	Vishay Intertechnologies	MOSFET 190V Vds 16V Vgs PowerPAK SC-75 RoHS: Compliant	6525	1:$0.8000 10:$0.6380 100:$0.4850 500:$0.4000 1000:$0.3200 3000:$0.2900 6000:$0.2710 9000:$0.2610
SIB452DK-T1-GE3 DISTI # 8141253P	Vishay Intertechnologies	TRANS MOSFET N-CH 190V 0.67A, RL	5980	60:£0.2530 200:£0.2520 400:£0.2510 800:£0.2490
SIB452DK-T1-GE3 DISTI # C1S803601460440	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2000	250:$0.3956 100:$0.3999 25:$0.4635 10:$0.5150
SIB452DK-T1-GE3 DISTI # 2364070	Vishay Intertechnologies	MOSFET, N-CH, 190V, 1.5A, PPAKSC75 RoHS: Compliant	2775	5:£0.4300 25:£0.2700 100:£0.2690 250:£0.2680 500:£0.2650
SIB452DK-T1-GE3 DISTI # 2364070	Vishay Intertechnologies	MOSFET, N-CH, 190V, 1.5A, PPAKSC75 RoHS: Compliant	2775	1:$1.2800 10:$1.0100 100:$0.7680 500:$0.6340 1000:$0.5070 3000:$0.4590 6000:$0.4290 9000:$0.4130
SIB452DK-T1-GE3	Vishay Intertechnologies	MOSFET 190V Vds 16V Vgs PowerPAK SC-75 RoHS: Compliant	Americas - 18000

画像	モデル	説明
	Mfr.#: SIB452DK-T1-GE3 OMO.#: OMO-SIB452DK-T1-GE3	MOSFET 190V Vds 16V Vgs PowerPAK SC-75
	Mfr.#: SIB452DK-T1-GE3-CUT TAPE OMO.#: OMO-SIB452DK-T1-GE3-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: SIB452D OMO.#: OMO-SIB452D-1190	ブランドニューオリジナル
	Mfr.#: SIB452DK OMO.#: OMO-SIB452DK-1190	ブランドニューオリジナル
	Mfr.#: SIB452DK-T1-GE3 OMO.#: OMO-SIB452DK-T1-GE3-VISHAY	MOSFET N-CH 190V 1.5A SC75-6

SIB452DK-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes