2DB1386R-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

SOT-89-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

- 20 V

Collector- Base Voltage VCBO:

- 30 V

Emitter- Base Voltage VEBO:

- 6 V

Collector-Emitter Saturation Voltage:

- 250 mV

Maximum DC Collector Current:

- 5 A

Gain Bandwidth Product fT:

100 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

2DB13

DC Current Gain hFE Max:

180 at 500 mA, 2 V

Height:

1.5 mm

Length:

4.5 mm

Packaging:

Reel

Width:

2.48 mm

Brand:

Diodes Incorporated

DC Collector/Base Gain hfe Min:

180 at 500 mA, 2 V

Pd - Power Dissipation:

1000 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2500

Subcategory:

Transistors

Unit Weight:

0.004603 oz

Tags

2DB1386R, 2DB13, 2DB1, 2DB