2N5886 PBFREE

Product Attribute

Attribute Value

Manufacturer:

Central Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3-2

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

80 V

Collector- Base Voltage VCBO:

80 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

4 V

Gain Bandwidth Product fT:

4 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

Series:

2N58

DC Current Gain hFE Max:

100 at 10 A, 4 V

Packaging:

Tube

Brand:

Central Semiconductor

Continuous Collector Current:

25 A

DC Collector/Base Gain hfe Min:

20 at 10 A, 4 V

Pd - Power Dissipation:

200 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

20

Subcategory:

Transistors

Tags

2N5886, 2N588, 2N58, 2N5