IPP139N08N3 G

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

80 V

Id - Continuous Drain Current:

45 A

Rds On - Drain-Source Resistance:

13.6 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.8 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

19 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

79 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Tube

Height:

15.65 mm

Length:

10 mm

Transistor Type:

1 N-Channel

Width:

4.4 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

48 S, 24 S

Fall Time:

5 ns

Product Type:

MOSFET

Rise Time:

35 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

18 ns

Typical Turn-On Delay Time:

12 ns

Part # Aliases:

IPP139N08N3GXKSA1 SP000680870

Unit Weight:

0.211644 oz

Tags

IPP139N08N3G, IPP139N08N3, IPP139, IPP13, IPP1, IPP