BSC883N03MS G

BSC883N03MS G
Mfr. #:
BSC883N03MS G
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8
Lifecycle:
New from this manufacturer.
Datasheet:
BSC883N03MS G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Series
BSC883N03
Packaging
Reel
Part-Aliases
BSC883N03MSGATMA1 SP000507418
Mounting-Style
SMD/SMT
Package-Case
TDSON-8
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single Quad Drain Triple Source
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
2.5 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
8 ns
Rise-Time
7.6 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
19 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistance
3.8 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
19 ns
Typical-Turn-On-Delay-Time
15 ns
Channel-Mode
Enhancement
Tags
BSC883N03MSG, BSC883N03M, BSC883, BSC8, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
BSC883N03MSGATMA1
DISTI # BSC883N03MSGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 34V 19A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Limited Supply - Call
    BSC883N03MSGATMA1
    DISTI # BSC883N03MSGATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 34V 19A TDSON-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      BSC883N03MSGATMA1
      DISTI # BSC883N03MSGATMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 34V 19A TDSON-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        BSC883N03MSGATMA1
        DISTI # SP000507418
        Infineon Technologies AGTrans MOSFET N-CH 30V 19A 8-Pin TDSON EP (Alt: SP000507418)
        RoHS: Compliant
        Min Qty: 1
        Europe - 0
        • 1:€0.5779
        • 10:€0.4899
        • 25:€0.4369
        • 50:€0.3929
        • 100:€0.3819
        • 500:€0.3719
        • 1000:€0.3649
        BSC883N03MSGInfineon Technologies AGPower Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant
        73343
        • 1000:$0.3400
        • 500:$0.3600
        • 100:$0.3800
        • 25:$0.3900
        • 1:$0.4200
        BSC883N03MS G
        DISTI # 726-BSC883N03MSG
        Infineon Technologies AGMOSFET N-Ch 30V 19A TDSON-8
        RoHS: Compliant
        0
          BSC883N03MS GInfineon Technologies AG 4777
            Image Part # Description
            BSC883N03LS G

            Mfr.#: BSC883N03LS G

            OMO.#: OMO-BSC883N03LS-G

            MOSFET N-Ch 34V 98A TDSON-8
            BSC883N03LSGATMA1

            Mfr.#: BSC883N03LSGATMA1

            OMO.#: OMO-BSC883N03LSGATMA1

            MOSFET LV POWER MOS
            BSC883N03LS

            Mfr.#: BSC883N03LS

            OMO.#: OMO-BSC883N03LS-1190

            New and Original
            BSC883N03LSG

            Mfr.#: BSC883N03LSG

            OMO.#: OMO-BSC883N03LSG-1190

            Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            BSC883N03LSGATMA1

            Mfr.#: BSC883N03LSGATMA1

            OMO.#: OMO-BSC883N03LSGATMA1-INFINEON-TECHNOLOGIES

            MOSFET N-CH 34V 17A TDSON-8
            BSC883N03LSGATMA1 , TDZF

            Mfr.#: BSC883N03LSGATMA1 , TDZF

            OMO.#: OMO-BSC883N03LSGATMA1-TDZF-1190

            New and Original
            BSC883N03MSG

            Mfr.#: BSC883N03MSG

            OMO.#: OMO-BSC883N03MSG-1190

            Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            BSC883N03MSGATMA1

            Mfr.#: BSC883N03MSGATMA1

            OMO.#: OMO-BSC883N03MSGATMA1-INFINEON-TECHNOLOGIES

            MOSFET N-CH 34V 19A TDSON-8
            BSC883N03MS G

            Mfr.#: BSC883N03MS G

            OMO.#: OMO-BSC883N03MS-G-126

            IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8
            BSC883N03LS G

            Mfr.#: BSC883N03LS G

            OMO.#: OMO-BSC883N03LS-G-317

            RF Bipolar Transistors MOSFET N-Ch 34V 98A TDSON-8
            Availability
            Stock:
            Available
            On Order:
            3000
            Enter Quantity:
            Current price of BSC883N03MS G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
            Reference price (USD)
            Quantity
            Unit Price
            Ext. Price
            1
            $0.00
            $0.00
            10
            $0.00
            $0.00
            100
            $0.00
            $0.00
            500
            $0.00
            $0.00
            1000
            $0.00
            $0.00
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