RJK5015DPM-00#T1

Product Attribute

Attribute Value

Manufacturer:

Renesas Electronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3PFM-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

25 A

Rds On - Drain-Source Resistance:

240 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

66 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

60 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Series:

RJK5015

Brand:

Renesas Electronics

Fall Time:

45 ns

Moisture Sensitive:

Yes

Product Type:

MOSFET

Rise Time:

59 ns

Factory Pack Quantity:

25

Subcategory:

MOSFETs

Typical Turn-On Delay Time:

42 ns

Unit Weight:

0.194007 oz

Tags

RJK5015, RJK501, RJK50, RJK5, RJK