FPF2G120BF07ASP

FPF2G120BF07ASP
Mfr. #:
FPF2G120BF07ASP
メーカー:
ON Semiconductor / Fairchild
説明:
IGBT Modules High Power Module
ライフサイクル:
メーカー新製品
データシート:
FPF2G120BF07ASP データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
FPF2G120BF07ASP 詳しくは
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
IGBTモジュール
JBoss:
Y
製品:
IGBTシリコンモジュール
構成:
トリプル
コレクター-エミッター電圧VCEOMax:
650 V
コレクター-エミッター飽和電圧:
1.55 V
25℃での連続コレクタ電流:
40 A
ゲートエミッタリーク電流:
2 uA
Pd-消費電力:
156 W
パッケージ/ケース:
F2
最低動作温度:
- 40 C
最高作動温度:
+ 150 C
包装:
トレイ
シリーズ:
FPF2G120BF07ASP
ブランド:
オン・セミコンダクター/フェアチャイルド
取り付けスタイル:
シャーシマウント
最大ゲートエミッタ電圧:
20 V
製品タイプ:
IGBTモジュール
ファクトリーパックの数量:
70
サブカテゴリ:
IGBT
単位重量:
1.587328 oz
Tags
FPF2G, FPF2, FPF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
HPM(High Power Module) - HPM F2 PKG, 32LD, SOLDERING TERMINAL, 3CH BOOST MODULE, PCM
***emi
Power Integrated Module (PIM), F2, SiC Diode + IGBT, 650 V, 40 A with pre-applied thermal interface material
***et Europe
Trans IGBT Module N-CH 650V 40A 17-Pin Case F2
***rchild Semiconductor
The FPF2G120BF07ASP is the 3ch boost topology which is providing an optimized solution for the multi-string solar application. And the integrated high speed field stop IGBTs and SiC diodes are providing lower conduction and switching losses. And the pre-applied PCM requires no additional process of the thermal interface material printing. Furthermore, the screwclamp provides a fast and reliable mounting method.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
SiC Diodes and IGBT Power Integrated Modules
ON Semiconductor Silicon Carbide (SiC) Diodes and IGBT Power Integrated Modules (PIM) provide lower conduction and switching losses. These integrated high-speed field stop IGBT and SiC diodes feature built-in Negative Temperature Co-efficient (NTC) for temperature monitoring. The SiC diodes and IGBT PIMs are optimized for solar inverters, UPS, or power stages that need a more compact design.
モデル メーカー 説明 ストック 価格
FPF2G120BF07ASP
DISTI # V99:2348_14141234
ON SemiconductorHPM(HIGH POWER MODULE)70
  • 25:$102.0699
  • 10:$105.1900
  • 5:$108.7000
  • 1:$109.0800
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP-ND
ON SemiconductorIC LOAD SWITCH
RoHS: Compliant
Min Qty: 1
Container: Tray
70In Stock
  • 10:$103.6350
  • 1:$109.2800
FPF2G120BF07ASP
DISTI # 31085825
ON SemiconductorHPM(HIGH POWER MODULE)70
  • 1:$109.0800
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP
ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Trays (Alt: FPF2G120BF07ASP)
RoHS: Compliant
Min Qty: 70
Container: Tray
Americas - 0
  • 700:$84.8900
  • 420:$86.9900
  • 280:$89.1900
  • 140:$91.4900
  • 70:$92.6900
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP
ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 (Alt: FPF2G120BF07ASP)
RoHS: Compliant
Min Qty: 1
Container: Case
Europe - 0
  • 1000:€81.6900
  • 500:€82.1900
  • 100:€82.7900
  • 50:€83.3900
  • 25:€83.8900
  • 10:€84.4900
  • 1:€85.0900
FPF2G120BF07ASP
DISTI # 512-FPF2G120BF07ASP
ON SemiconductorIGBT Modules High Power Module
RoHS: Compliant
70
  • 1:$112.8000
  • 5:$110.7300
  • 10:$105.7500
  • 25:$102.2200
画像 モデル 説明
FPF2G120BF07ASP

Mfr.#: FPF2G120BF07ASP

OMO.#: OMO-FPF2G120BF07ASP

IGBT Modules High Power Module
FPF2G120BF07AS

Mfr.#: FPF2G120BF07AS

OMO.#: OMO-FPF2G120BF07AS

IGBT Modules High Power Module
FPF2G120BF07AS

Mfr.#: FPF2G120BF07AS

OMO.#: OMO-FPF2G120BF07AS-ON-SEMICONDUCTOR

IC LOAD SWITCH
FPF2G120BF07ASP

Mfr.#: FPF2G120BF07ASP

OMO.#: OMO-FPF2G120BF07ASP-ON-SEMICONDUCTOR

IC LOAD SWITCH
可用性
ストック:
70
注文中:
2053
数量を入力してください:
FPF2G120BF07ASPの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$112.80
$112.80
5
$110.73
$553.65
10
$105.75
$1 057.50
25
$102.22
$2 555.50
100
$95.19
$9 519.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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