PMZ350UPEYL

Product Attribute

Attribute Value

Manufacturer:

Nexperia

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

DFN-1006-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

1.4 A

Rds On - Drain-Source Resistance:

940 mOhms

Vgs th - Gate-Source Threshold Voltage:

450 mV

Vgs - Gate-Source Voltage:

8 V

Qg - Gate Charge:

1.3 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

360 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.5 mm

Length:

1.02 mm

Product:

MOSFET

Type:

Trench MOSFET

Width:

0.62 mm

Brand:

Nexperia

Forward Transconductance - Min:

1.4 S

Fall Time:

9 ns

Product Type:

MOSFET

Rise Time:

5 ns

Factory Pack Quantity:

10000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

26 ns

Typical Turn-On Delay Time:

4 ns

Unit Weight:

0.000028 oz

Tags

PMZ35, PMZ3, PMZ