BC 850B E6327

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Transistor Polarity:

NPN

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

45 V

Collector- Base Voltage VCBO:

50 V

Emitter- Base Voltage VEBO:

6 V

Collector-Emitter Saturation Voltage:

200 mV

Maximum DC Collector Current:

200 mA

Gain Bandwidth Product fT:

250 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Series:

BC850

DC Current Gain hFE Max:

450

Height:

1 mm

Length:

2.9 mm

Packaging:

Reel

Width:

1.3 mm

Brand:

Infineon Technologies

Continuous Collector Current:

100 mA

DC Collector/Base Gain hfe Min:

200

Pd - Power Dissipation:

330 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Part # Aliases:

BC850BE6327HTSA1 BC85BE6327XT SP000010572

Unit Weight:

0.000282 oz

Tags

BC850BE, BC850B, BC850, BC85, BC8