NVMYS2D1N04CLTWG

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

LFPAK-4

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

139 A

Rds On - Drain-Source Resistance:

2.15 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

50 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

83 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

ON Semiconductor

Forward Transconductance - Min:

116 S

Fall Time:

9.4 ns

Product Type:

MOSFET

Rise Time:

8.3 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

28 ns

Typical Turn-On Delay Time:

12 ns

Tags

NVMYS2, NVMY, NVM