SIA910EDJ-T1-GE3

Mfr. #:: SIA910EDJ-T1-GE3
メーカー:: Vishay
説明:: MOSFET 2N-CH 12V 4.5A SC-70-6
ライフサイクル:: メーカー新製品
データシート:: SIA910EDJ-T1-GE3 データシート
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詳しくは:: SIA910EDJ-T1-GE3 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: ICチップ

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SIA910EDJ-GE3

単位重量: 0.000988 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: PowerPAKR SC-70-6 Dual

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: PowerPAKR SC-70-6 Dual

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 7.8W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 12V

入力-静電容量-Ciss-Vds: 455pF @ 6V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 4.5A

Rds-On-Max-Id-Vgs: 28 mOhm @ 5.2A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

ゲートチャージ-Qg-Vgs: 16nC @ 8V

Pd-電力損失: 7.8 W

最高作動温度: + 150 C

最低作動温度: - 55 C

Id-連続-ドレイン-電流: 4.5 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 12 V

Rds-On-Drain-Source-Resistance: 23 mOhms

トランジスタ-極性: Nチャネル

Qg-Gate-Charge: 10.5 nC

フォワード-相互コンダクタンス-最小: 23 S

Tags: SIA910, SIA91, SIA9, SIA

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA910EDJ-T1-GE3 説明

***ure Electronics: Dual N-Channel 12 V 28 mOhm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L

***ical: Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R

***ronik: N+N-MOS+ESD 4,5A 12V PP-SC70-6

***nell: MOSFET, DUAL N CH, 12V, 4.5A, POWERPAK; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:7.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:-

SIA910EDJ-T1-GE3 詳しくは

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

モデル	メーカー	説明	ストック	価格
SIA910EDJ-T1-GE3 DISTI # SIA910EDJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.2392
SIA910EDJ-T1-GE3 DISTI # SIA910EDJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.2719 500:$0.3399 100:$0.4589 10:$0.5950 1:$0.6800
SIA910EDJ-T1-GE3 DISTI # SIA910EDJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.2719 500:$0.3399 100:$0.4589 10:$0.5950 1:$0.6800
SIA910EDJ-T1-GE3 DISTI # SIA910EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA910EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.4369 6000:€0.2979 12000:€0.2559 18000:€0.2369 30000:€0.2199
SIA910EDJ-T1-GE3 DISTI # SIA910EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA910EDJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2029 6000:$0.1969 12000:$0.1889 18000:$0.1839 30000:$0.1789
SIA910EDJ-T1-GE3 DISTI # 05W6927	Vishay Intertechnologies	Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 05W6927) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.2500
SIA910EDJ-T1-GE3 DISTI # 97W2599	Vishay Intertechnologies	Dual MOSFET, Dual N Channel, 4.5 A, 12 V, 0.023 ohm, 4.5 V, 400 mV , RoHS Compliant: Yes	0	1:$0.6000 25:$0.4790 50:$0.4220 100:$0.3640 250:$0.3320 500:$0.3000 1000:$0.2500
SIA910EDJ-T1-GE3 DISTI # 05W6927	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 12V, 4.5A, POWERPAK SC70-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes	0	1:$0.1670 25:$0.1670 50:$0.1670 100:$0.1670 250:$0.1670 500:$0.1670 1000:$0.1670
SIA910EDJ-T1-GE3. DISTI # 30AC0111	Vishay Intertechnologies	DUAL N-CHANNEL 12-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.2500 3000:$0.2500
SIA910EDJ-T1-GE3 DISTI # 70459579	Vishay Siliconix	12V 4.5A/4.5A N-CH DUAL MOSFET RoHS: Compliant	0	3000:$0.6670 6000:$0.5120
SIA910EDJ-T1-GE3 DISTI # 781-SIA910EDJ-T1-GE3	Vishay Intertechnologies	MOSFET 12V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant	0	1:$0.6000 10:$0.4790 100:$0.3640 500:$0.3000 1000:$0.2500
SIA910EDJ-T1-GE3 DISTI # 2335391	Vishay Intertechnologies	MOSFET, DUAL N CH, 12V, 4.5A, POWERPAK RoHS: Compliant	0	5:£0.4180 25:£0.3920 100:£0.2810 250:£0.2570 500:£0.2320
SIA910EDJ-T1-GE3 DISTI # 2335391	Vishay Intertechnologies	MOSFET, DUAL N CH, 12V, 4.5A, POWERPAK RoHS: Compliant	0	1:$0.9500 10:$0.7590 100:$0.5770 500:$0.4750 1000:$0.3960 3000:$0.3960
SIA910EDJ-T1-GE3	Vishay Intertechnologies	MOSFET 12V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant	Americas - Stock

画像	モデル	説明
	Mfr.#: SIA910EDJ-T1-GE3 OMO.#: OMO-SIA910EDJ-T1-GE3	MOSFET 12V Vds 8V Vgs PowerPAK SC-70
	Mfr.#: SIA910EDJ-T1-GE3-CUT TAPE OMO.#: OMO-SIA910EDJ-T1-GE3-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: SIA910EDJ-T1-GE3 OMO.#: OMO-SIA910EDJ-T1-GE3-VISHAY	MOSFET 2N-CH 12V 4.5A SC-70-6
	Mfr.#: SIA910EDJT1GE3 OMO.#: OMO-SIA910EDJT1GE3-1190	ブランドニューオリジナル

SIA910EDJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes