KSD363Y

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

120 V

Collector- Base Voltage VCBO:

300 V

Emitter- Base Voltage VEBO:

8 V

Collector-Emitter Saturation Voltage:

1 V

Maximum DC Collector Current:

6 A

Gain Bandwidth Product fT:

10 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

240

Height:

9.4 mm (Max)

Length:

10.1 mm (Max)

Packaging:

Bulk

Width:

4.7 mm (Max)

Brand:

ON Semiconductor / Fairchild

Continuous Collector Current:

6 A

DC Collector/Base Gain hfe Min:

40

Pd - Power Dissipation:

40 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

200

Subcategory:

Transistors

Unit Weight:

0.080072 oz

Tags

KSD363Y, KSD363, KSD36, KSD3, KSD