KSD363Y stock, KSD363Y, KSD363Y


PartNumber	KSD363Y	KSD363YTU
Description	Bipolar Transistors - BJT NPN Epitaxial Sil	Bipolar Transistors - BJT NPN Epitaxial Sil
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	Y
Mounting Style	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3
Transistor Polarity	NPN	NPN
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	120 V	120 V
Collector Base Voltage VCBO	300 V	300 V
Emitter Base Voltage VEBO	8 V	8 V
Collector Emitter Saturation Voltage	1 V	-
Maximum DC Collector Current	6 A	6 A
Gain Bandwidth Product fT	10 MHz	10 MHz
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
DC Current Gain hFE Max	240	-
Height	9.4 mm (Max)	9.4 mm
Length	10.1 mm (Max)	10.1 mm
Packaging	Bulk	Tube
Width	4.7 mm (Max)	4.7 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Continuous Collector Current	6 A	-
DC Collector/Base Gain hfe Min	40	120
Pd Power Dissipation	40 W	40000 mW
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	200	1000
Subcategory	Transistors	Transistors
Unit Weight	0.080072 oz	0.063493 oz
Series	-	KSD363
Part # Aliases	-	KSD363YTU_NL

Search Part Number : "KSD363Y", Match & Start with "KSD363Y" - Total : 6

Manufacturer	Part #	Description
ON Semiconductor / Fairchild	KSD363Y	Bipolar Transistors - BJT NPN Epitaxial Sil
ON Semiconductor / Fairchild	KSD363YTU	Bipolar Transistors - BJT NPN Epitaxial Sil
ON Semiconductor	KSD363YTU	Bipolar Transistors - BJT NPN Epitaxial Sil
ON Semiconductor	KSD363Y	TRANS NPN 120V 6A TO-220
	KSD363YTA	New and Original
	KSD363YTU KSD363-Y	New and Original

KSD363Y