SI4662DY-T1-E3

SI4662DY-T1-E3
Mfr. #:
SI4662DY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
RF Bipolar Transistors MOSFET 30V 18.6A 6.25W
Lifecycle:
New from this manufacturer.
Datasheet:
SI4662DY-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
SI4662DY-T1-E3 more Information
Product Attribute
Attribute Value
Manufacturer
vishay
Product Category
IC Chips
Packaging
Reel
Part-Aliases
SI4662DY-E3
Unit-Weight
0.006596 oz
Mounting-Style
SMD/SMT
Package-Case
SOIC-Narrow-8
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
3 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
15 ns
Rise-Time
50 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
12.9 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistance
10 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
26 ns
Typical-Turn-On-Delay-Time
21 ns
Channel-Mode
Enhancement
Tags
SI4662, SI466, SI46, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Part # Mfg. Description Stock Price
SI4662DY-T1-E3
DISTI # 781-SI4662DY-E3
Vishay IntertechnologiesMOSFET 30V 18.6A 6.25W
RoHS: Compliant
0
  • 2500:$0.4200
  • 5000:$0.3990
  • 10000:$0.3850
Image Part # Description
SI4662DY-T1-E3

Mfr.#: SI4662DY-T1-E3

OMO.#: OMO-SI4662DY-T1-E3

MOSFET 30V 18.6A 6.25W
SI4662DY-T1-GE3

Mfr.#: SI4662DY-T1-GE3

OMO.#: OMO-SI4662DY-T1-GE3

MOSFET 30V 18.6A 6.25W 10mohm @ 10V
SI4662DY-T1-GE3

Mfr.#: SI4662DY-T1-GE3

OMO.#: OMO-SI4662DY-T1-GE3-317

RF Bipolar Transistors MOSFET 30V 18.6A 6.25W 10mohm @ 10V
SI4662DY-T1-E3

Mfr.#: SI4662DY-T1-E3

OMO.#: OMO-SI4662DY-T1-E3-317

RF Bipolar Transistors MOSFET 30V 18.6A 6.25W
SI4662DY-T1-E3 GE3

Mfr.#: SI4662DY-T1-E3 GE3

OMO.#: OMO-SI4662DY-T1-E3-GE3-1190

New and Original
Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of SI4662DY-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.58
$0.58
10
$0.55
$5.49
100
$0.52
$51.98
500
$0.49
$245.45
1000
$0.46
$462.00
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