NTD23N03R-1G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

25 V

Id - Continuous Drain Current:

23 A

Rds On - Drain-Source Resistance:

32 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

16.4 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

6.35 mm

Length:

6.73 mm

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

2.38 mm

Brand:

ON Semiconductor

Forward Transconductance - Min:

13 S

Fall Time:

2 ns

Product Type:

MOSFET

Rise Time:

14.9 ns

Factory Pack Quantity:

75

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

9.9 ns

Typical Turn-On Delay Time:

2 ns

Unit Weight:

0.139332 oz

Tags

NTD23N03R, NTD23, NTD2, NTD