SQJB80EP-T1_GE3

Name: Vishay - SQJB80EP-T1_GE3
Brand: Vishay
SKU: OMO-7986603
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SQJB80EP-T1_GE3
メーカー:: Vishay
説明:: MOSFET 2 N-CH 80V POWERPAK SO8
ライフサイクル:: メーカー新製品
データシート:: SQJB80EP-T1_GE3 データシート
配達:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SQJB80EP-T1_GE3 Datasheet SQJB80EP-T1_GE3 Datasheet (P4-P6)SQJB80EP-T1_GE3 Datasheet (P7)
ECAD Model:

製品属性
属性値

Tags: SQJB, SQJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQJB80EP-T1_GE3 説明

***ical: Trans MOSFET N-CH 80V 30A Automotive 8-Pin PowerPAK SO EP

***et: Trans MOSFET Array Dual N-CH 80V 30A 8-Pin PowerPAK-SO

***i-Key: MOSFET 2 N-CH 80V POWERPAK SO8

***ark: Mosfet, Aec-Q101, 80V, 30A, Powerpak So; Transistor Polarity:dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0155Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, 80V, 30A, POWERPAK SO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:48W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)

***nell: MOSFET, AEC-Q101, 80V, 30A, POWERPAK SO; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:80V; Resistenza di Attivazione Rds(on):0.0155ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:48W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)

Market price

モデル	メーカー	説明	ストック	価格
SQJB80EP-T1_GE3 DISTI # V72:2272_17600343	Vishay Intertechnologies	SQJB80EP-T1_GE3**MULT1 9172 3107020	3595	75000:$0.4225 30000:$0.4312 15000:$0.4400 6000:$0.4487 3000:$0.4574 1000:$0.4662 500:$0.5548 250:$0.6791 100:$0.6856 50:$0.7216 25:$0.8018 10:$0.9799 1:$1.1862
SQJB80EP-T1_GE3 DISTI # V99:2348_17600343	Vishay Intertechnologies	SQJB80EP-T1_GE3**MULT1 9172 3107020	0	3000000:$0.4573 1500000:$0.4574 300000:$0.4580 3000:$0.4586
SQJB80EP-T1_GE3 DISTI # SQJB80EP-T1_GE3CT-ND	Vishay Siliconix	MOSFET 2 N-CH 80V POWERPAK SO8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3219In Stock	1000:$0.5061 500:$0.6411 100:$0.7761 10:$0.9950 1:$1.1100
SQJB80EP-T1_GE3 DISTI # SQJB80EP-T1_GE3DKR-ND	Vishay Siliconix	MOSFET 2 N-CH 80V POWERPAK SO8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3219In Stock	1000:$0.5061 500:$0.6411 100:$0.7761 10:$0.9950 1:$1.1100
SQJB80EP-T1_GE3 DISTI # SQJB80EP-T1_GE3TR-ND	Vishay Siliconix	MOSFET 2 N-CH 80V POWERPAK SO8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	15000:$0.4193 6000:$0.4357 3000:$0.4586
SQJB80EP-T1_GE3 DISTI # 25817765	Vishay Intertechnologies	SQJB80EP-T1_GE3**MULT1 9172 3107020	3595	15:$1.1862
SQJB80EP-T1_GE3 DISTI # SQJB80EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET Array Dual N-CH 80V 30A 8-Pin PowerPAK-SO - Tape and Reel (Alt: SQJB80EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SQJB80EP-T1_GE3 DISTI # SQJB80EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET Array Dual N-CH 80V 30A 8-Pin PowerPAK-SO (Alt: SQJB80EP-T1_GE3) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€0.4359 500:€0.4409 100:€0.4489 50:€0.4549 25:€0.5149 10:€0.6349 1:€0.8859
SQJB80EP-T1_GE3 DISTI # 20AC3999	Vishay Intertechnologies	DUAL N-CHANNEL 80-V (D-S) 175C MOSFE	0	10000:$0.3970 6000:$0.4060 4000:$0.4220 2000:$0.4680 1000:$0.5150 1:$0.5370
SQJB80EP-T1_GE3 DISTI # 78-SQJB80EP-T1_GE3	Vishay Intertechnologies	MOSFET 80V Vds 30A Id AEC-Q101 Qualified RoHS: Compliant	3160	1:$1.0900 10:$0.8980 100:$0.6890 500:$0.5920 1000:$0.4670 3000:$0.4360 6000:$0.4140 9000:$0.3990
SQJB80EP-T1_GE3 DISTI # 2708321	Vishay Intertechnologies	MOSFET, AEC-Q101, 80V, 30A, POWERPAK SO RoHS: Compliant	5817	1000:$0.7630 500:$0.9670 100:$1.1700 10:$1.5000 1:$1.6700
SQJB80EP-T1_GE3 DISTI # 2708321	Vishay Intertechnologies	MOSFET, AEC-Q101, 80V, 30A, POWERPAK SO	5818	500:£0.5290 250:£0.6060 100:£0.6820 10:£0.8880 1:£1.0700

SQJB80EP-T1_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes