IRF1312PBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

80 V

Id - Continuous Drain Current:

95 A

Rds On - Drain-Source Resistance:

10 mOhms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

93 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

210 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

15.65 mm

Length:

10 mm

Transistor Type:

1 N-Channel

Type:

HEXFET Power MOSFET

Width:

4.4 mm

Brand:

Infineon / IR

Fall Time:

51 ns

Product Type:

MOSFET

Rise Time:

130 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

47 ns

Typical Turn-On Delay Time:

25 ns

Part # Aliases:

SP001564478

Unit Weight:

0.211644 oz

Tags

IRF1312, IRF131, IRF13, IRF1, IRF