STW19NM60N

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

13 A

Rds On - Drain-Source Resistance:

260 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

25 V

Qg - Gate Charge:

35 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

110 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Tradename:

MDmesh

Packaging:

Tube

Series:

STW19NM60N

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Fall Time:

25 ns

Product Type:

MOSFET

Rise Time:

15 ns

Factory Pack Quantity:

600

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

55 ns

Typical Turn-On Delay Time:

12 ns

Unit Weight:

1.340411 oz

Tags

STW19, STW1, STW