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SIE832DF-T1-E3

SIE832DF-T1-E3
Mfr. #:
SIE832DF-T1-E3
メーカー:
Vishay
説明:
RF Bipolar Transistors MOSFET 40V 50A 104W
ライフサイクル:
メーカー新製品
データシート:
SIE832DF-T1-E3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
Tags
SIE832, SIE83, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 0.0055 Ohms Surface Mount Power Mosfet - PolarPAK
***ical
Trans MOSFET N-CH Si 40V 23.6A 10-Pin PolarPAK T/R
***et Europe
Trans MOSFET N-CH 40V 23.6A 10-Pin PolarPAK T/R
***i-Key
MOSFET N-CH 40V 50A 10-POLARPAK
***
N-CHANNEL 40-V (D-S) MOSFET
***ark
N Channel Mosfet, 40V, 50A Polarpak, Full Reel; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0046Ohm; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
***nell
MOSFET, N, POLAR PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:103A; Resistance, Rds On:0.0055ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.2V; Case Style:PolarPAK; Termination Type:SMD; Charge, Gate N-channel:25nC; Current, Idm Pulse:80A; Power Dissipation:104mW; Power, Pd:104W; Resistance, Rds on @ Vgs = 10V:0.0055ohm; Resistance, Rds on @ Vgs = 4.5V:0.007ohm; Voltage, Rds Measurement:10V; Voltage, Vds Max:40V; Voltage, Vgs th Max:3V; Voltage, Vgs th Min:1.5V
***ment14 APAC
MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:103A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:104W; Transistor Case Style:PolarPAK; SVHC:No SVHC (20-Jun-2011); N-channel Gate Charge:25nC; On State Resistance @ Vgs = 4.5V:7mohm; On State resistance @ Vgs = 10V:5.5mohm; Package / Case:PolarPAK; Power Dissipation Pd:104W; Power Dissipation Pd:104mW; Pulse Current Idm:80A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1.5V
モデル メーカー 説明 ストック 価格
SIE832DF-T1-E3
DISTI # V72:2272_07434213		Vishay IntertechnologiesTrans MOSFET N-CH Si 40V 23.6A 10-Pin PolarPAK T/R1400
  • 1000:$1.3300
  • 500:$1.3940
  • 250:$1.4570
  • 100:$1.6190
  • 25:$1.7990
  • 10:$1.8380
  • 1:$2.0430
SIE832DF-T1-E3
DISTI # SIE832DF-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 40V 50A 10-POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIE832DF-T1-E3
    DISTI # SIE832DF-T1-E3CT-ND    		Vishay SiliconixMOSFET N-CH 40V 50A 10-POLARPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SIE832DF-T1-E3
      DISTI # SIE832DF-T1-E3DKR-ND      		Vishay SiliconixMOSFET N-CH 40V 50A 10-POLARPAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SIE832DF-T1-E3
        DISTI # 25778472        		Vishay IntertechnologiesTrans MOSFET N-CH Si 40V 23.6A 10-Pin PolarPAK T/R1400
        • 1000:$1.3300
        • 500:$1.3940
        • 250:$1.4570
        • 100:$1.6190
        • 25:$1.7990
        • 10:$1.8380
        • 5:$2.0430
        SIE832DF-T1-E3
        DISTI # 69W7163        		Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 50A, POLARPAK-10,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes0
        • 1:$3.2000
        • 25:$2.6500
        • 50:$2.4200
        • 100:$2.1800
        • 250:$2.1100
        • 500:$1.9000
        SIE832DF-T1-E3.
        DISTI # 30AC0113        		Vishay IntertechnologiesN CHANNEL MOSFET, 40V, 50A POLARPAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0046ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes0
          SIE832DF-T1-E3
          DISTI # 781-SIE832DF-T1-E3          		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PolarPAK
          RoHS: Compliant          		2741
          • 1:$3.2000
          • 10:$2.6500
          • 100:$2.1800
          • 250:$2.1100
          • 500:$1.9000
          SIE832DF-T1-E3
          DISTI # 2459395          		Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 50A, POLARPAK-10
          RoHS: Compliant          		0
          • 3000:£1.6700
          SIE832DF-T1-E3
          DISTI # 2459395          		Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 50A, POLARPAK-10
          RoHS: Compliant          		0
          • 1:$5.0700
          • 10:$4.1900
          • 100:$3.4600
          • 250:$3.3400
          • 500:$3.0100
          • 3000:$3.0100
          SIE832DF-T1-E3
          DISTI # 1497648          		Vishay IntertechnologiesMOSFET, N, POLAR PAK
          RoHS: Compliant          		0
          • 1:$5.0700
          • 10:$4.1900
          • 100:$3.4600
          • 250:$3.3400
          • 500:$3.0100
          • 3000:$3.0100
          SIE832DF-T1-E3
          DISTI # C1S803600875210          		Vishay IntertechnologiesMOSFETs
          RoHS: Compliant          		1400
          • 250:$1.4570
          • 100:$1.6190
          • 25:$1.7990
          • 10:$1.8380
          • 1:$2.0400
          SIE832DF-T1-E3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PolarPAKAmericas -
            画像 モデル 説明
            SIE832DF-T1-E3

            Mfr.#: SIE832DF-T1-E3

            OMO.#: OMO-SIE832DF-T1-E3

            		 MOSFET RECOMMENDED ALT 781-SIE818DF-GE3
            SIE832DF-T1-GE3

            Mfr.#: SIE832DF-T1-GE3

            OMO.#: OMO-SIE832DF-T1-GE3

            		 MOSFET RECOMMENDED ALT 781-SIE818DF-GE3
            SIE832DF-T1-E3

            Mfr.#: SIE832DF-T1-E3

            OMO.#: OMO-SIE832DF-T1-E3-VISHAY

            		 RF Bipolar Transistors MOSFET 40V 50A 104W
            SIE832DF-T1-GE3

            Mfr.#: SIE832DF-T1-GE3

            OMO.#: OMO-SIE832DF-T1-GE3-VISHAY

            		 RF Bipolar Transistors MOSFET 40V 103A 104W 5.5mohm @ 10V
            SIE832DF

            Mfr.#: SIE832DF

            OMO.#: OMO-SIE832DF-1190

            		 ブランドニューオリジナル
            SIE832DFT1GE3

            Mfr.#: SIE832DFT1GE3

            OMO.#: OMO-SIE832DFT1GE3-1190

            		 Power Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            可用性
            ストック:
            Available
            注文中:
            3500
            数量を入力してください:
            SIE832DF-T1-E3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
            参考価格（USD）
            量
            単価
            小計金額
            1
            $2.00
            $2.00
            10
            $1.90
            $18.95
            100
            $1.80
            $179.55
            500
            $1.70
            $847.90
            1000
            $1.60
            $1 596.00
            2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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