CSD16327Q3T

Product Attribute

Attribute Value

Manufacturer:

Texas Instruments

Product Category:

MOSFET

RoHS:

E

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

VSON-Clip-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

25 V

Id - Continuous Drain Current:

60 A

Rds On - Drain-Source Resistance:

4.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

900 mV

Vgs - Gate-Source Voltage:

10 V, - 8 V

Qg - Gate Charge:

8.4 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

74 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

NexFET

Packaging:

Reel

Height:

1 mm

Length:

3.3 mm

Series:

CSD16327Q3

Transistor Type:

1 N-Channel

Width:

3.3 mm

Brand:

Texas Instruments

Forward Transconductance - Min:

96 S

Fall Time:

6.3 ns

Product Type:

MOSFET

Rise Time:

15 ns

Factory Pack Quantity:

250

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

13 ns

Typical Turn-On Delay Time:

5.3 ns

Unit Weight:

0.001570 oz

Tags

CSD16327, CSD1632, CSD163, CSD16, CSD1, CSD