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| PartNumber | CSD16327Q3 | CSD16327Q3T | CSD16327 |
| Description | MOSFET N-Channel NexFET Pwr MOSFET | MOSFET 25V, N ch NexFET MOSFETG , single SON3x3, 4.8mOhm 8-VSON-CLIP -55 to 150 | |
| Manufacturer | Texas Instruments | Texas Instruments | TI |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | E | E | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | VSON-Clip-8 | VSON-Clip-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
| Id Continuous Drain Current | 100 A | 60 A | - |
| Rds On Drain Source Resistance | 4.8 mOhms | 4.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 900 mV | - |
| Vgs Gate Source Voltage | 10 V | 10 V, - 8 V | - |
| Qg Gate Charge | 6.2 nC | 8.4 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 3 W | 74 W | - |
| Configuration | Single | Single | Single |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Height | 1 mm | 1 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | CSD16327Q3 | CSD16327Q3 | NexFET |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 250 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.001549 oz | 0.001570 oz | - |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 96 S | - |
| Fall Time | - | 6.3 ns | - |
| Rise Time | - | 15 ns | - |
| Typical Turn Off Delay Time | - | 13 ns | - |
| Typical Turn On Delay Time | - | 5.3 ns | - |
| Package Case | - | - | 8-PowerTDFN |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-VSON (3.3x3.3) |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 3W |
| Drain to Source Voltage Vdss | - | - | 25V |
| Input Capacitance Ciss Vds | - | - | 1300pF @ 12.5V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 60A (Tc) |
| Rds On Max Id Vgs | - | - | 4 mOhm @ 24A, 8V |
| Vgs th Max Id | - | - | 1.4V @ 250μA |
| Gate Charge Qg Vgs | - | - | 8.4nC @ 4.5V |
| Pd Power Dissipation | - | - | 3 W |
| Vgs Gate Source Voltage | - | - | 10 V |
| Id Continuous Drain Current | - | - | 21 A |
| Vds Drain Source Breakdown Voltage | - | - | 25 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.2 V |
| Rds On Drain Source Resistance | - | - | 4 mOhms |
| Qg Gate Charge | - | - | 6.2 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Texas Instruments |
CSD16327Q3 | MOSFET N-Channel NexFET Pwr MOSFET | |
| CSD16327Q3T | MOSFET 25V, N ch NexFET MOSFETG , single SON3x3, 4.8mOhm 8-VSON-CLIP -55 to 150 | ||
| CSD16327 | New and Original | ||
| CSD16327Q3T | CSD16327Q3T | ||
| CSD16327Q3 | Trans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R |