IRFH5220TR2PBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PQFN-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

3.8 A

Rds On - Drain-Source Resistance:

99.9 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

20 nC

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

3.6 W

Configuration:

Single

Packaging:

Reel

Height:

0.83 mm

Length:

6 mm

Transistor Type:

1 N-Channel

Width:

5 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

16 S

Fall Time:

3.4 ns

Product Type:

MOSFET

Rise Time:

4.7 ns

Factory Pack Quantity:

400

Subcategory:

MOSFETs

Part # Aliases:

SP001572556

Tags

IRFH52, IRFH5, IRFH, IRF