IPP230N06L3 G

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

30 A

Rds On - Drain-Source Resistance:

23 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

36 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Tube

Height:

15.65 mm

Length:

10 mm

Series:

IPP230N06

Transistor Type:

1 N-Channel

Width:

4.4 mm

Brand:

Infineon Technologies

Fall Time:

3 ns

Product Type:

MOSFET

Rise Time:

3 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

19 ns

Typical Turn-On Delay Time:

9 ns

Part # Aliases:

IPP230N06L3GXKSA1 SP000680886

Unit Weight:

0.211644 oz

Tags

IPP230N06L3G, IPP230N06L3, IPP23, IPP2, IPP