FDD1600N10ALZ

Mfr. #:: FDD1600N10ALZ
メーカー:: ON Semiconductor
説明:: MOSFET N CH 100V 6.8A TO252-3
ライフサイクル:: メーカー新製品
データシート:: FDD1600N10ALZ データシート
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ECAD Model:

製品属性
属性値

メーカー: フェアチャイルドセミコンダクター

製品カテゴリ: FET-シングル

シリーズ: PowerTrenchR

包装: Digi-ReelR代替パッケージ

単位重量: 0.009184 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: TO-252-3, DPak (2 Leads + Tab), SC-63

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: TO-252, (D-Pak)

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 14.9W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

入力-静電容量-Ciss-Vds: 225pF @ 50V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 6.8A (Tc)

Rds-On-Max-Id-Vgs: 160 mOhm @ 3.4A, 10V

Vgs-th-Max-Id: 2.8V @ 250μA

ゲートチャージ-Qg-Vgs: 3.61nC @ 10V

Pd-電力損失: 14.9 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 14 ns

立ち上がり時間: 14 ns

Id-連続-ドレイン-電流: 6.8 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.8 V

Rds-On-Drain-Source-Resistance: 175 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 13 ns

典型的なターンオン遅延時間: 7 ns

Qg-Gate-Charge: 3.61 nC

フォワード-相互コンダクタンス-最小: 34 S

Tags: FDD16, FDD1, FDD

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD1600N10ALZ 説明

***Semiconductor: N-Channel PowerTrench® MOSFET 100V, 6.8A, 160mΩ

***ark: PT5 100V LL ZENER 150MOHM GREEN COMPOUND - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

***ical: Trans MOSFET N-CH 100V 6.8A 3-Pin(2+Tab) TO-252 T/R

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Market price

モデル	メーカー	説明	ストック	価格
FDD1600N10ALZ DISTI # FDD1600N10ALZCT-ND	ON Semiconductor	MOSFET N CH 100V 6.8A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1718In Stock	1000:$0.3807 500:$0.4723 100:$0.6325 10:$0.8160 1:$0.9300
FDD1600N10ALZ DISTI # FDD1600N10ALZDKR-ND	ON Semiconductor	MOSFET N CH 100V 6.8A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1718In Stock	1000:$0.3807 500:$0.4723 100:$0.6325 10:$0.8160 1:$0.9300
FDD1600N10ALZ DISTI # FDD1600N10ALZTR-ND	ON Semiconductor	MOSFET N CH 100V 6.8A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.3363
FDD1600N10ALZD DISTI # FDD1600N10ALZDCT-ND	ON Semiconductor	MOSFET N-CH 100V 6.8A TO252-5L RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDD1600N10ALZD DISTI # FDD1600N10ALZDDKR-ND	ON Semiconductor	MOSFET N-CH 100V 6.8A TO252-5L RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDD1600N10ALZD DISTI # FDD1600N10ALZDTR-ND	ON Semiconductor	MOSFET N-CH 100V 6.8A TO252-5L RoHS: Compliant Container: Tape & Reel (TR)	Temporarily Out of Stock
FDD1600N10ALZ DISTI # FDD1600N10ALZ	ON Semiconductor	Trans MOSFET N-CH 100V 6.8A 3-Pin DPAK T/R (Alt: FDD1600N10ALZ) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.3061 5000:$0.2943 7500:$0.2834 12500:$0.2733 25000:$0.2639 62500:$0.2551 125000:$0.2509
FDD1600N10ALZ DISTI # FDD1600N10ALZ	ON Semiconductor	Trans MOSFET N-CH 100V 6.8A 3-Pin DPAK T/R - Tape and Reel (Alt: FDD1600N10ALZ) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2639 5000:$0.2619 10000:$0.2579 15000:$0.2549 25000:$0.2489
FDD1600N10ALZ DISTI # FDD1600N10ALZ	ON Semiconductor	Trans MOSFET N-CH 100V 6.8A 3-Pin DPAK T/R (Alt: FDD1600N10ALZ) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.3899 5000:€0.3189 10000:€0.2919 15000:€0.2699 25000:€0.2509
FDD1600N10ALZD DISTI # FDD1600N10ALZD	ON Semiconductor	Trans MOSFET N-CH 100V 6.8A 5-Pin TO-252 T/R - Tape and Reel (Alt: FDD1600N10ALZD) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0
FDD1600N10ALZ DISTI # 46AC0764	ON Semiconductor	MOSFET, N-CH, 100V, 6.8A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:6.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.124ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes	2385	1000:$0.3460 500:$0.3740 250:$0.4000 100:$0.4270 50:$0.5020 25:$0.5770 10:$0.6520 1:$0.7860
FDD1600N10ALZ DISTI # 63W2849	ON Semiconductor	FET 100V 150.0 MOHM DPAK / REEL	0	25000:$0.2600 10000:$0.2680 2500:$0.2780 1:$0.2800
FDD1600N10ALZ DISTI # 512-FDD1600N10ALZ	ON Semiconductor	MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND RoHS: Compliant	2003	1:$0.7500 10:$0.6270 100:$0.4040 1000:$0.3240
FDD1600N10ALZD DISTI # 512-FDD1600N10ALZD	ON Semiconductor	MOSFET 100V, 6.8A, 160mOhm N-Channel BoostPak RoHS: Compliant	989	1:$0.8300 10:$0.7060 100:$0.5420 500:$0.4790 1000:$0.3780 2500:$0.3360 10000:$0.3230 25000:$0.3130
FDD1600N10ALZ DISTI # 8648041P	ON Semiconductor	MOSFET N-CH 100V 6.8A POWERTRENCH DPAK, RL	1525	2500:£0.2080 1250:£0.2430 250:£0.2730 125:£0.3020
FDD1600N10ALZ	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 6.8A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	Europe - 2500
FDD1600N10ALZ DISTI # 2825152	ON Semiconductor	MOSFET, N-CH, 100V, 6.8A, TO-252-3 RoHS: Compliant	2425	500:£0.2700 250:£0.2900 100:£0.3110 25:£0.4980 5:£0.5440
FDD1600N10ALZ DISTI # 2825152	ON Semiconductor	MOSFET, N-CH, 100V, 6.8A, TO-252-3 RoHS: Compliant	2385	5000:$0.4060 1000:$0.4300 500:$0.4660 250:$0.5680 100:$0.6930 25:$1.0100 5:$1.1800

画像	モデル	説明
	Mfr.#: FDD1600N10ALZ OMO.#: OMO-FDD1600N10ALZ	MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND
	Mfr.#: FDD1600N10ALZD OMO.#: OMO-FDD1600N10ALZD	MOSFET 100V, 6.8A, 160mOhm N-Channel BoostPak
	Mfr.#: FDD1600N10ALZ OMO.#: OMO-FDD1600N10ALZ-ON-SEMICONDUCTOR	MOSFET N CH 100V 6.8A TO252-3
	Mfr.#: FDD1600N10ALZD OMO.#: OMO-FDD1600N10ALZD-ON-SEMICONDUCTOR	MOSFET N-CH 100V 6.8A TO252-5L

FDD1600N10ALZ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes