IRF3711ZSPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

92 A

Rds On - Drain-Source Resistance:

7.3 mOhms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

16 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

79 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

4.4 mm

Length:

10 mm

Transistor Type:

1 N-Channel

Type:

HEXFET Power MOSFET

Width:

9.25 mm

Brand:

Infineon / IR

Fall Time:

5.4 ns

Product Type:

MOSFET

Rise Time:

16 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

15 ns

Typical Turn-On Delay Time:

12 ns

Part # Aliases:

SP001561710

Unit Weight:

0.139332 oz

Tags

IRF3711ZS, IRF3711Z, IRF3711, IRF371, IRF37, IRF3, IRF