 |  | | |
| PartNumber | IRF3711ZSPBF | IRF3711ZS | IRF3711ZSTRL |
| Description | MOSFET 20V 1 N-CH HEXFET 6mOhms 5.3nC | MOSFET N-CH 20V 92A D2PAK | MOSFET N-CH 20V 92A D2PAK |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 92 A | - | - |
| Rds On Drain Source Resistance | 7.3 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 16 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 79 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 5.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | SP001561710 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IRF3711ZSPBF | MOSFET 20V 1 N-CH HEXFET 6mOhms 5.3nC | |
Infineon Technologies |
IRF3711ZS | MOSFET N-CH 20V 92A D2PAK | |
| IRF3711ZSPBF | MOSFET N-CH 20V 92A D2PAK | ||
| IRF3711ZSTRL | MOSFET N-CH 20V 92A D2PAK | ||
| IRF3711ZSTRR | MOSFET N-CH 20V 92A D2PAK | ||
| IRF3711ZSTRLPBF | MOSFET N-CH 20V 92A D2PAK | ||
| IRF3711ZSTRRPBF | MOSFET N-CH 20V 92A D2PAK |