KSB1116AGBU

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

- 60 V

Collector- Base Voltage VCBO:

- 80 V

Emitter- Base Voltage VEBO:

- 6 V

Collector-Emitter Saturation Voltage:

- 0.2 V

Maximum DC Collector Current:

1 A

Gain Bandwidth Product fT:

120 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

KSB1116A

DC Current Gain hFE Max:

400

Height:

5.33 mm

Length:

5.2 mm

Packaging:

Bulk

Width:

4.19 mm

Brand:

ON Semiconductor / Fairchild

Continuous Collector Current:

- 1 A

DC Collector/Base Gain hfe Min:

135

Pd - Power Dissipation:

750 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1000

Subcategory:

Transistors

Unit Weight:

0.006286 oz

Tags

KSB1116A, KSB111, KSB11, KSB1, KSB