STP17N62K3

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

620 V

Id - Continuous Drain Current:

15 A

Rds On - Drain-Source Resistance:

380 mOhms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

94 nC

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

190 W

Configuration:

Single

Packaging:

Tube

Series:

STP17N62K3

Transistor Type:

1 N-Channel

Type:

SuperMESH3 Power MOSFET

Brand:

STMicroelectronics

Forward Transconductance - Min:

1.6 S

Fall Time:

63 ns

Product Type:

MOSFET

Rise Time:

26 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

91 ns

Typical Turn-On Delay Time:

25 ns

Unit Weight:

0.011640 oz

Tags

STP17N, STP17, STP1, STP