SIS410DN-T1-GE3

Mfr. #:: SIS410DN-T1-GE3
メーカー:: Vishay
説明:: MOSFET N-CH 20V 35A PPAK 1212-8
ライフサイクル:: メーカー新製品
データシート:: SIS410DN-T1-GE3 データシート
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詳しくは:: SIS410DN-T1-GE3 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SIS410DN-GE3

取り付けスタイル: SMD / SMT

パッケージ-ケース: PowerPAKR 1212-8

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: PowerPAKR 1212-8

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 52W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 20V

入力-静電容量-Ciss-Vds: 1600pF @ 10V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 35A (Tc)

Rds-On-Max-Id-Vgs: 4.8 mOhm @ 20A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

ゲートチャージ-Qg-Vgs: 41nC @ 10V

Pd-電力損失: 5.2 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 15 ns

立ち上がり時間: 15 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 35 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 20 V

Rds-On-Drain-Source-Resistance: 5 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 30 ns

典型的なターンオン遅延時間: 25 ns

フォワード-相互コンダクタンス-最小: 70 S

チャネルモード: 強化

Tags: SIS410D, SIS410, SIS41, SIS4, SIS

Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS410DN-T1-GE3 詳しくは

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Market price

モデル	メーカー	説明	ストック	価格
SIS410DN-T1-GE3 DISTI # V36:1790_09216084	Vishay Intertechnologies	Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0	3000000:$0.4227 1500000:$0.4229 300000:$0.4329 30000:$0.4484 3000:$0.4509
SIS410DN-T1-GE3 DISTI # V72:2272_09216084	Vishay Intertechnologies	Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0
SIS410DN-T1-GE3 DISTI # SIS410DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 35A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	161825In Stock	1000:$0.4975 500:$0.6302 100:$0.7629 10:$0.9790 1:$1.0900
SIS410DN-T1-GE3 DISTI # SIS410DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 35A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	161825In Stock	1000:$0.4975 500:$0.6302 100:$0.7629 10:$0.9790 1:$1.0900
SIS410DN-T1-GE3 DISTI # SIS410DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 35A PPAK 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	159000In Stock	15000:$0.4122 6000:$0.4283 3000:$0.4508
SIS410DN-T1-GE3 DISTI # SIS410DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R (Alt: SIS410DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.4459 18000:€0.4659 12000:€0.5269 6000:€0.6499 3000:€0.9059
SIS410DN-T1-GE3 DISTI # SIS410DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS410DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.3759 18000:$0.3859 12000:$0.3969 6000:$0.4139 3000:$0.4259
SIS410DN-T1-GE3 DISTI # 08R0706	Vishay Intertechnologies	MOSFET, N CH, 20V, 35A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:52W RoHS Compliant: Yes	0	12000:$0.3850 6000:$0.4340 3000:$0.4560 1:$0.4590
SIS410DN-T1-GE3 DISTI # 05W6932	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 35A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes	0	1000:$0.4870 500:$0.6080 250:$0.6510 100:$0.6860 10:$0.8680 1:$0.8960
SIS410DN-T1-GE3 DISTI # 55R1905	Vishay Intertechnologies	MOSFET, N-CH, 20V, 35A, POWERPAK8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):4mohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:5.2W,Operating RoHS Compliant: Yes	1220	1000:$0.5640 500:$0.5960 100:$0.6930 50:$0.7630 25:$0.8320 10:$0.9020 1:$1.1000
SIS410DN-T1-GE3 DISTI # 781-SIS410DN-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	7753	1:$1.0800 10:$0.8920 100:$0.6850 500:$0.5890 1000:$0.4640 3000:$0.4330 6000:$0.4120 9000:$0.3960
SIS410DN-T1-GE3 DISTI # 1779235	Vishay Intertechnologies	MOSFET, N-CH, 20V, 35A, POWERPAK8 RoHS: Compliant	1221	1000:$0.7500 500:$0.9500 100:$1.1500 10:$1.4800 1:$1.6400
SIS410DN-T1-GE3 DISTI # 1779235	Vishay Intertechnologies	MOSFET, N-CH, 20V, 35A, POWERPAK8	1426	500:£0.4280 250:£0.4630 100:£0.4970 25:£0.6470 5:£0.7600
SIS410DNT1GE3	Vishay Intertechnologies	Power Field-Effect Transistor, 22A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	3000
SIS410DN-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAK 1212-8	Americas - 6000	3000:$0.4250 6000:$0.4040 12000:$0.3910 18000:$0.3800

画像	モデル	説明
	Mfr.#: SIS410DN-T1-GE3 OMO.#: OMO-SIS410DN-T1-GE3	MOSFET 20V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SIS410DN OMO.#: OMO-SIS410DN-1190	ブランドニューオリジナル
	Mfr.#: SIS410DN-T1-E3 OMO.#: OMO-SIS410DN-T1-E3-1190	ブランドニューオリジナル
	Mfr.#: SIS410DN-T1-GE3 OMO.#: OMO-SIS410DN-T1-GE3-VISHAY	MOSFET N-CH 20V 35A PPAK 1212-8

SIS410DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes