RJH60F4DPQ-A0#T0

Mfr. #:: RJH60F4DPQ-A0#T0
Manufacturer:: Renesas Electronics
Description:: IGBT Transistors IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: RJH60F4DPQ-A0#T0 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: RJH60F4DPQ-A0#T0 Datasheet RJH60F4DPQ-A0#T0 Datasheet (P4-P6)RJH60F4DPQ-A0#T0 Datasheet (P7-P8)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Renesas Electronics

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Packaging:: Tube

Brand:: Renesas Electronics

Moisture Sensitive:: Yes

Product Type:: IGBT Transistors

Factory Pack Quantity:: 1

Subcategory:: IGBTs

Unit Weight:: 0.216582 oz

Tags: RJH60F4DPQ-A, RJH60F4DPQ, RJH60F4D, RJH60F4, RJH60F, RJH60, RJH6, RJH

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RJH60F4DPQ-A0#T0 Description

***ical: Trans IGBT Chip N-CH 600V 60A 235800mW 3-Pin(3+Tab) TO-247A Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247

***ark: Igbt, High Speed, 600V, 60A, To-247A

***nell: IGBT, HIGH SPEED, 600V, 60A, TO-247A; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 235.8W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o

***ure Electronics: IRG4PC40SPbF Series 600 V 31 A N-Channel Standard Speed IGBT - TO-220AC

***p One Stop Global: Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3+Tab) TO-247AC Tube

***(Formerly Allied Electronics): 600V DC-1 KHZ (STANDARD) DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC40SPBF

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 940 ns Power dissipation: 160 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):1.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, 600V, 60A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Current Temperature:25°C; Device Marking:IRG4PC40SPbF; Fall Time Max:380ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***icroelectronics: Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

***ical: Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 1.55V; Transistor Case Style: TO-247; No. of Pins

***ical: Trans IGBT Chip N-CH 600V 47A 192000mW 3-Pin(3+Tab) TO-247AC Tube

*** Electronic Components: IGBT Transistors 600V UltraFast IGBT TO-247

***S: French Electronic Distributor since 1988

***i-Key Marketplace: IRGP6630D - IGBT WITH ULTRAFAST

***nell: IGBT, 600V, 47A, TO-247AC-3; DC Collector Current: 47A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3

***ical: Trans IGBT Chip N-CH 600V 47A 206000mW 3-Pin(3+Tab) TO-247AD Tube

***nell: IGBT, SINGLE, 600V, 47A, TO-247AD-3; DC Collector Current: 47A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 206W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. o

***ark: Igbt, 600V, 47A, 206W, To-247Ad; Continuous Collector Current:47A; Collector Emitter Saturation Voltage:1.95V; Power Dissipation:206W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IRGP4630D-EPBF..

***Yang: TO-247, SINGLE, N-CHANNEL, 600V SMPS IGBT - Bulk

*** Electronic Components: IGBT Transistors Sgl N-Ch 600V SMPS

***nell: IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:2.5V; Power Dissipation:167W; Case Style:TO-247; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:108A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:53ns; Time, Rise:10ns; Transistors, No. of:1

***ical: Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel

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RJH60F4DPQ-A0#T0

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes