SBC808-25LT1G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Package / Case:

SOT-23-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

25 V

Collector- Base Voltage VCBO:

30 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

0.5 A

Gain Bandwidth Product fT:

100 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

BC808

DC Current Gain hFE Max:

160 at 100 mA, 1 V

Height:

0.94 mm

Length:

2.9 mm

Packaging:

Reel

Width:

1.3 mm

Brand:

ON Semiconductor

DC Collector/Base Gain hfe Min:

160 at 100 mA, 1 V

Pd - Power Dissipation:

300 mW

Product Type:

BJTs - Bipolar Transistors

Qualification:

AEC-Q101

Factory Pack Quantity:

3000

Subcategory:

Transistors

Unit Weight:

0.000282 oz

Tags

SBC80, SBC8, SBC