DMN62D1LFD-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

X1-DFN1212-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

400 mA

Rds On - Drain-Source Resistance:

1.4 Ohms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

550 pC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

500 mW (1/2 W)

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

DMN62D

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Fall Time:

13.9 ns

Product Type:

MOSFET

Rise Time:

2.8 ns

Factory Pack Quantity:

10000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

21 ns

Typical Turn-On Delay Time:

2.1 ns

Tags

DMN62D1LFD, DMN62D1L, DMN62D1, DMN62, DMN6, DMN