SI3900DV-T1-GE3

SI3900DV-T1-GE3
Mfr. #:
SI3900DV-T1-GE3
メーカー:
Vishay
説明:
MOSFET 2N-CH 20V 2A 6-TSOP
ライフサイクル:
メーカー新製品
データシート:
SI3900DV-T1-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
SI3900DV-T1-GE3 詳しくは
製品属性
属性値
Tags
SI3900DV-T, SI3900, SI390, SI39, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI3900DV-T1-GE3 Dual N-channel MOSFET Transistor; 2 A; 20 V; 6-Pin TSOP
***ical
Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
***ark
Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:2.4A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.125ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
モデル メーカー 説明 ストック 価格
SI3900DV-T1-GE3
DISTI # 32748690
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
RoHS: Compliant
3000
  • 3000:$0.2754
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3CT-ND
Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5987In Stock
  • 1000:$0.4542
  • 500:$0.5754
  • 100:$0.6965
  • 10:$0.8930
  • 1:$1.0000
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3DKR-ND
Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5987In Stock
  • 1000:$0.4542
  • 500:$0.5754
  • 100:$0.6965
  • 10:$0.8930
  • 1:$1.0000
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 15000:$0.3763
  • 6000:$0.3910
  • 3000:$0.4116
SI3900DV-T1-GE3
DISTI # V36:1790_09216710
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
RoHS: Compliant
0
  • 3000000:$0.3818
  • 1500000:$0.3820
  • 300000:$0.3925
  • 30000:$0.4090
  • 3000:$0.4116
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R (Alt: SI3900DV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.2249
  • 18000:€0.2419
  • 12000:€0.2619
  • 6000:€0.3039
  • 3000:€0.4459
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3900DV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.3579
  • 18000:$0.3679
  • 12000:$0.3789
  • 6000:$0.3949
  • 3000:$0.4069
SI3900DV-T1-GE3
DISTI # 35R0064
Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, 2.4A, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins RoHS Compliant: Yes0
  • 10000:$0.3560
  • 6000:$0.3640
  • 4000:$0.3780
  • 2000:$0.4200
  • 1000:$0.4620
  • 1:$0.4820
SI3900DV-T1-GE3
DISTI # 35R6229
Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, 2.4A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.5V RoHS Compliant: Yes0
  • 1000:$0.4240
  • 500:$0.5380
  • 250:$0.5820
  • 100:$0.6250
  • 50:$0.7200
  • 25:$0.8150
  • 1:$0.9900
SI3900DV-T1-GE3
DISTI # 70616165
Vishay SiliconixSI3900DV-T1-GE3 Dual N-channel MOSFET Transistor,2 A,20 V,6-Pin TSOP
RoHS: Compliant
0
  • 300:$0.6000
  • 600:$0.5000
  • 1500:$0.4600
  • 3000:$0.3800
SI3900DV-T1-GE3
DISTI # 781-SI3900DV-GE3
Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs TSOP-6
RoHS: Compliant
2949
  • 1:$0.9700
  • 10:$0.8060
  • 100:$0.6180
  • 500:$0.5320
  • 1000:$0.4190
  • 3000:$0.3910
  • 6000:$0.3720
  • 9000:$0.3640
SI3900DV-T1-GE3
DISTI # 8123170P
Vishay IntertechnologiesTRANS MOSFET N-CH 20V 2A, RL2360
  • 1500:£0.3940
  • 760:£0.4280
  • 160:£0.4650
SI3900DV-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs TSOP-6
RoHS: Compliant
Americas -
  • 3000:$0.3980
  • 6000:$0.3780
  • 12000:$0.3660
  • 18000:$0.3560
画像 モデル 説明
SI3900DV-T1-E3

Mfr.#: SI3900DV-T1-E3

OMO.#: OMO-SI3900DV-T1-E3

MOSFET TSOP6 20V DUAL N-CH (D-S) TREN
SI3900DV-T1-GE3

Mfr.#: SI3900DV-T1-GE3

OMO.#: OMO-SI3900DV-T1-GE3

MOSFET 20V Vds 12V Vgs TSOP-6
SI3900DV

Mfr.#: SI3900DV

OMO.#: OMO-SI3900DV-1190

ブランドニューオリジナル
SI3900DV-T1

Mfr.#: SI3900DV-T1

OMO.#: OMO-SI3900DV-T1-1190

MOSFET RECOMMENDED ALT 781-SI3900DV-E3
SI3900DV-T1-E3

Mfr.#: SI3900DV-T1-E3

OMO.#: OMO-SI3900DV-T1-E3-VISHAY

MOSFET 2N-CH 20V 2A 6-TSOP
SI3900DV-T1-F3

Mfr.#: SI3900DV-T1-F3

OMO.#: OMO-SI3900DV-T1-F3-1190

ブランドニューオリジナル
SI3900DV-T1-GE3

Mfr.#: SI3900DV-T1-GE3

OMO.#: OMO-SI3900DV-T1-GE3-VISHAY

MOSFET 2N-CH 20V 2A 6-TSOP
可用性
ストック:
Available
注文中:
1000
数量を入力してください:
SI3900DV-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$0.00
$0.00
10
$0.00
$0.00
100
$0.00
$0.00
500
$0.00
$0.00
1000
$0.00
$0.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
皮切りに
Top