MRF6S23100HR3

Product Attribute

Attribute Value

Manufacturer:

NXP

Product Category:

RF MOSFET Transistors

RoHS:

Y

Transistor Polarity:

N-Channel

Technology:

Si

Vds - Drain-Source Breakdown Voltage:

68 V

Gain:

15.4 dB

Output Power:

20 W

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Mounting Style:

SMD/SMT

Package / Case:

NI-780-3

Packaging:

Reel

Configuration:

Single

Height:

4.32 mm

Length:

34.16 mm

Operating Frequency:

2.3 GHz to 2.4 GHz

Type:

RF Power MOSFET

Width:

9.91 mm

Brand:

NXP / Freescale

Channel Mode:

Enhancement

Pd - Power Dissipation:

330 W

Product Type:

RF MOSFET Transistors

Factory Pack Quantity:

250

Subcategory:

MOSFETs

Vgs - Gate-Source Voltage:

- 0.5 V, 12 V

Vgs th - Gate-Source Threshold Voltage:

3 V

Unit Weight:

0.226635 oz

Tags

MRF6S2310, MRF6S23, MRF6S2, MRF6S, MRF6, MRF