TSM1NB60SCT A3

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

500 mA

Rds On - Drain-Source Resistance:

10 Ohms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

6.1 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.5 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Ammo Pack

Transistor Type:

1 N-Channel

Brand:

Taiwan Semiconductor

Forward Transconductance - Min:

0.8 S

Fall Time:

14.9 ns

Product Type:

MOSFET

Rise Time:

6.8 ns

Factory Pack Quantity:

2000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

15.3 ns

Typical Turn-On Delay Time:

7.7 ns

Unit Weight:

0.016000 oz

Tags

TSM1NB, TSM1N, TSM1, TSM