FDD6670S

Mfr. #:: FDD6670S
メーカー:: Rochester Electronics, LLC
説明:: MOSFET 30V N-Ch PowerTrench
ライフサイクル:: メーカー新製品
データシート:: FDD6670S データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

Tags: FDD6670, FDD667, FDD66, FDD6, FDD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD6670S 説明

***et: MOSFET 30V N-Ch PowerTrench

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***(Formerly Allied Electronics): ATP302-TL-H P-channel MOSFET Transistor; 70 A; 60 V; 3-Pin ATPAK

***ure Electronics: P-Channel 60 V 13 mOhm 70 W Surface Mount Power Mosfet - ATPAK

***ark: MOSFET, P-CH, -60V, -70A, ATPAK; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:70A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.6V; MSL:- RoHS Compliant: Yes

***icroelectronics: Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in DPAK package

***r Electronics: Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

*** Source Electronics: Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 40V 80A DPAK

***ure Electronics: STD80N4F6 40 V 6 mO 36 nC -Channel STripFET Power Mosfet - TO-252 (DPAK)

***ment14 APAC: MOSFET, N-CH, 40V, 80A, 175DEG C, 70W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:40V; On Resistance

***nell: MOSFET, N-CH, 40V, 80A, 175DEG C, 70W; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 70W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET VI DeepGATE Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ark: Transistor,mosfet,n-Channel,30V V(Br)Dss,15A I(D),to-252Aa Rohs Compliant: Yes

***emi: PowerTrench® MOSFET, N-Channel, 30V, 73A, 8.2mΩ

***r Electronics: Power Field-Effect Transistor, 15A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***i-Key: MOSFET N-CH 30V 71A D2PAK

***Yang: TRANS MOSFET N-CH 30V 71A 3PIN TO-263 - Bulk

***ser: MOSFETs 30V N-Ch PowerTrench MOSFET

***ser: MOSFETs 30V,73A,8.2 OHM,NCH PWR TRENCH MOSFET

***i-Key Marketplace: MOSFET N-CH 30V 15A/73A IPAK

***r Electronics: Power Field-Effect Transistor, 15A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***et: N-Channel PowerTrench MOSFET

***el Nordic: Contact for details

***ure Electronics: Single N-Channel 30 V 4.8 mOhm 15 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 30V 92A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 75 W

***nell: MOSFET, N CH, 30V, 78A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 75W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 92A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.8V; Voltage Vgs Rds on Measurement: 10V

Market price

モデル	メーカー	説明	ストック	価格
FDD6670S DISTI # 512-FDD6670S	ON Semiconductor	MOSFET 30V N-Ch PowerTrench RoHS: Compliant	0
FDD6670S	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 64A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	47486	1000:$0.9000 500:$0.9400 100:$0.9800 25:$1.0200 1:$1.1000

画像	モデル	説明
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	Mfr.#: FDD6670AS OMO.#: OMO-FDD6670AS-ON-SEMICONDUCTOR	MOSFET N-CH 30V 76A DPAK
	Mfr.#: FDD6680A OMO.#: OMO-FDD6680A-ON-SEMICONDUCTOR	MOSFET N-CH 30V 14A DPAK
	Mfr.#: FDD6782A OMO.#: OMO-FDD6782A-ON-SEMICONDUCTOR	MOSFET N-CH 25V 20A DPAK

FDD6670S

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes