SIZ904DT-T1-GE3

Mfr. #:: SIZ904DT-T1-GE3
メーカー:: Vishay
説明:: MOSFET 2N-CH 30V 12A POWERPAIR
ライフサイクル:: メーカー新製品
データシート:: SIZ904DT-T1-GE3 データシート
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詳しくは:: SIZ904DT-T1-GE3 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-アレイ

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SIZ904DT-GE3

取り付けスタイル: SMD / SMT

パッケージ-ケース: 6-PowerPair

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 6-PowerPair

構成: デュアル

FETタイプ: 2 N-Channel (Half Bridge)

パワーマックス: 20W, 33W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 435pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 12A, 16A

Rds-On-Max-Id-Vgs: 24 mOhm @ 7.8A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

ゲートチャージ-Qg-Vgs: 12nC @ 10V

Pd-電力損失: 33 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 10 ns 8 ns

立ち上がり時間: 10 ns 9 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 16 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 24 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 15 nS 14 nS

Qg-Gate-Charge: 3.8 nC 7.3 nC

Tags: SIZ904, SIZ90, SIZ9, SiZ

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIZ904DT-T1-GE3 詳しくは

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

PowerPAIR® Dual-MOSFETs: Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency.

Market price

モデル	メーカー	説明	ストック	価格
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12A POWERPAIR RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.5205
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.5A/14.5A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ904DT-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SIZ904DT-T1-GE3 DISTI # 70616574	Vishay Siliconix	SIZ904DT-T1-GE3 Dual N-channel MOSFET Transistor,9.5A,14.5A,30V,8-Pin PowerPAIR RoHS: Compliant	0	300:$0.6600 600:$0.6500 1500:$0.6400 3000:$0.6200
SIZ904DT-T1-GE3 DISTI # 78-SIZ904DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5 RoHS: Compliant	0	1:$1.1900 10:$0.9740 100:$0.7470 500:$0.6430 1000:$0.6080 3000:$0.5640
SIZ904DTT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SIZ904DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5	Americas -

画像	モデル	説明
	Mfr.#: SIZ904DT-T1-GE3 OMO.#: OMO-SIZ904DT-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
	Mfr.#: SIZ904DT OMO.#: OMO-SIZ904DT-1190	ブランドニューオリジナル
	Mfr.#: SIZ904DT-T1-GE3 OMO.#: OMO-SIZ904DT-T1-GE3-VISHAY	MOSFET 2N-CH 30V 12A POWERPAIR
	Mfr.#: SIZ904DTT1GE3 OMO.#: OMO-SIZ904DTT1GE3-1190	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SIZ904DT-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes