OMO ElectronicOMO Electronic
Expand menu
こんにちは、サインインマイアカウント
0 ショッピングカート

SI5515CDC-T1-E3

SI5515CDC-T1-E3
Mfr. #:
SI5515CDC-T1-E3
メーカー:
Vishay
説明:
MOSFET N/P-CH 20V 4A 1206-8
ライフサイクル:
メーカー新製品
データシート:
SI5515CDC-T1-E3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
SI5515CDC-T1-E3 詳しくは
製品属性
属性値
Tags
SI5515CDC-T, SI5515CDC, SI5515C, SI5515, SI551, SI55, SI5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N/P-Channel 20 V 2.1/1.3 W 11.3/11 nC Silicon SMT Mosfet - 1206-8 ChipFET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:8V; Package/Case:8-1206; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
***ment14 APAC
DUAL N/P CHANNEL MOSFET, 20V, 1206; Tran; DUAL N/P CHANNEL MOSFET, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:4A; Continuous Drain Current Id, P Channel:-3.1A; Drain Source Voltage Vds, N Channel:20V
***nell
MOSFET, NP CH, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:1206; No. of Pins:8
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
モデル メーカー 説明 ストック 価格
SI5515CDC-T1-E3
DISTI # V72:2272_09216222		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R
RoHS: Compliant		2960
  • 1000:$0.3504
  • 500:$0.3976
  • 250:$0.4851
  • 100:$0.5049
  • 25:$0.5964
  • 10:$0.7288
  • 1:$0.9011
SI5515CDC-T1-E3
DISTI # V36:1790_09216222		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R
RoHS: Compliant		0
  • 3000:$0.2863
SI5515CDC-T1-E3
DISTI # SI5515CDC-T1-E3TR-ND		Vishay SiliconixMOSFET N/P-CH 20V 4A 1206-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.2793
  • 15000:$0.2867
  • 6000:$0.2977
  • 3000:$0.3197
SI5515CDC-T1-E3
DISTI # SI5515CDC-T1-E3CT-ND		Vishay SiliconixMOSFET N/P-CH 20V 4A 1206-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3634
  • 500:$0.4542
  • 100:$0.5746
  • 10:$0.7490
  • 1:$0.8500
SI5515CDC-T1-E3
DISTI # SI5515CDC-T1-E3DKR-ND		Vishay SiliconixMOSFET N/P-CH 20V 4A 1206-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3634
  • 500:$0.4542
  • 100:$0.5746
  • 10:$0.7490
  • 1:$0.8500
SI5515CDC-T1-E3
DISTI # 32378710		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R
RoHS: Compliant		2960
  • 24:$0.9011
SI5515CDC-T1-E3
DISTI # SI5515CDC-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5515CDC-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SI5515CDC-T1-E3
    DISTI # SI5515CDC-T1-E3    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R (Alt: SI5515CDC-T1-E3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.2599
    • 18000:€0.2789
    • 12000:€0.3019
    • 6000:€0.3509
    • 3000:€0.5149
    SI5515CDC-T1-E3
    DISTI # SI5515CDC-T1-E3    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R (Alt: SI5515CDC-T1-E3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      SI5515CDC-T1-E3
      DISTI # 16P3787      		Vishay IntertechnologiesDUAL N/P CHANNEL MOSFET, 20V, 1206,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:800mV RoHS Compliant: Yes0
      • 2500:$0.3440
      • 1000:$0.4340
      • 500:$0.4940
      • 250:$0.5760
      • 100:$0.6480
      • 50:$0.7320
      • 25:$0.8040
      • 1:$0.8960
      SI5515CDC-T1-E3
      DISTI # 781-SI5515CDC-E3      		Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs 1206-8 ChipFET
      RoHS: Compliant      		21484
      • 1:$0.8300
      • 10:$0.6690
      • 100:$0.5080
      • 500:$0.4200
      • 1000:$0.3360
      • 3000:$0.3040
      • 6000:$0.2830
      • 9000:$0.2730
      • 24000:$0.2620
      SI5515CDC-T1-E3Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs 1206-8 ChipFET
      RoHS: Compliant      		Americas -
        画像 モデル 説明
        SI5515CDC-T1-E3

        Mfr.#: SI5515CDC-T1-E3

        OMO.#: OMO-SI5515CDC-T1-E3

        		 MOSFET -20V Vds 8V Vgs 1206-8 ChipFET
        SI5515CDC-T1-GE3-CUT TAPE

        Mfr.#: SI5515CDC-T1-GE3-CUT TAPE

        OMO.#: OMO-SI5515CDC-T1-GE3-CUT-TAPE-1190

        		 ブランドニューオリジナル
        SI5515CD

        Mfr.#: SI5515CD

        OMO.#: OMO-SI5515CD-1190

        		 ブランドニューオリジナル
        SI5515CDC

        Mfr.#: SI5515CDC

        OMO.#: OMO-SI5515CDC-1190

        		 ブランドニューオリジナル
        SI5515CDC-E3

        Mfr.#: SI5515CDC-E3

        OMO.#: OMO-SI5515CDC-E3-1190

        		 ブランドニューオリジナル
        SI5515CDC-T1-E3

        Mfr.#: SI5515CDC-T1-E3

        OMO.#: OMO-SI5515CDC-T1-E3-VISHAY

        		 MOSFET N/P-CH 20V 4A 1206-8
        SI5515CDC-T1-GE3

        Mfr.#: SI5515CDC-T1-GE3

        OMO.#: OMO-SI5515CDC-T1-GE3-VISHAY

        		 MOSFET N/P-CH 20V 4A 1206-8
        SI5515CDCD-T1-GE3

        Mfr.#: SI5515CDCD-T1-GE3

        OMO.#: OMO-SI5515CDCD-T1-GE3-1190

        		 ブランドニューオリジナル
        SI5515CDCT1GE3

        Mfr.#: SI5515CDCT1GE3

        OMO.#: OMO-SI5515CDCT1GE3-1190

        		 ブランドニューオリジナル
        可用性
        ストック:
        Available
        注文中:
        4000
        数量を入力してください:
        SI5515CDC-T1-E3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
        参考価格（USD）
        量
        単価
        小計金額
        1
        $0.39
        $0.39
        10
        $0.37
        $3.73
        100
        $0.35
        $35.37
        500
        $0.33
        $167.05
        1000
        $0.31
        $314.40
        2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
        皮切りに
        Top