SIZF920DT-T1-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAIR 6x5F-8

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

76 A, 197 A

Rds On - Drain-Source Resistance:

3.07 mOhms, 1.05 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.1 V

Vgs - Gate-Source Voltage:

- 16 V, 20 V, - 12 V, 16 V

Qg - Gate Charge:

29 nC, 125 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

28 W, 74 W

Configuration:

Dual

Channel Mode:

Enhancement

Tradename:

TrenchFET; PowerPAK

Packaging:

Reel

Transistor Type:

2 N-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

65 S, 135 S

Fall Time:

5 ns, 10 ns

Product Type:

MOSFET

Rise Time:

5 ns, 70 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

20 ns, 43 ns

Typical Turn-On Delay Time:

11 ns, 17 ns

Tags

SIZF9, SIZF, SiZ