FDMW2512NZ

Mfr. #:: FDMW2512NZ
メーカー:: Rochester Electronics, LLC
説明:: MOSFET 2.5V NCH MONOLITHIC COMON DR
ライフサイクル:: メーカー新製品
データシート:: FDMW2512NZ データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

Tags: FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMW2512NZ 説明

***et: 20V MONOLITHIC COMMON DRAIN N-CHANNEL 2.5V SPECIFIED POWERTR

***ser: IGBTs 2.5V,NCH MONOLITHIC COMON DR

***el Electronic: Small Signal Field-Effect Transistor, 7.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 5 MM, 0.80 MM HEIGHT, MICROFET, MLP-6

***Yang: Transistor MOSFET Array Dual N-CH 20V 9.7A 6-Pin MLP T/R - Tape and Reel

***emi: Dual Common Drain N-Channel PowerTrench® MOSFET 20V , 9.7A, 16.5mΩ

***ment14 APAC: MOSFET, NN CH, 20V, 9.7A, MLP2X3; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art MicroFET Leadframe, the FDMB2307NZ minimizes both PCB space and rS1S2(on).

***Yang: Transistor MOSFET Array Dual N-Channel 20V 8.7A 6-Pin MLP EP T/R - Bulk

***ser: MOSFETs 20V MonoL Drn N-Chl 2.5V PwrTrch MOSFET

***eco: 6LD,MLP,DUAL,NON-JEDEC,2X5MM

***el Electronic: DC DC Converters 1 (Unlimited) 1 8-SMD Module, 5 Leads Surface Mount Isolated Module ITE (Commercial) ECONOLINE R2S (2W) -40°C~100°C 0.50Lx0.42W x 0.35 H 12.8mmx10.7mmx9.0mm CONV DC/DC 2W 24VIN 15VOUT

***Yang: Transistor MOSFET Array Dual P-CH 20V 7.8A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: P-Channel 20 V 33 mOhm 2 W Surface Mount Power MOSFET - SOIC-8

***th Star Micro: NTMD6P02: Power MOSFET 20V 7.8A 33 mOhm Dual P-Channel SO-8

***emi: Dual P-Channel Power MOSFET -20V -6A 33mΩ

***(Formerly Allied Electronics): NTMD6P02R2G; Dual MOSFET Power Driver 6A; 8-Pin SOIC

***enic: 20V 4.8A 2W 33m´Î@4.5V6.2A 1.2V@250Ã×A 2 P-Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: P CHANNEL MOSFET, -20V, SOIC; Transistor; P CHANNEL MOSFET, -20V, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id, P Channel:-7.8A; Drain Source Voltage Vds, P Channel:-20V; On Resistance Rds(on), P Channel:0.027ohm; Rds(on) Test Voltage Vgs:-4.5V

***nell: MOSFET, P, 20V, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.8A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -880mV; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: MOSFET; Voltage Vds Typ: -20V; Voltage Vgs Rds on Measurement: -4.5V

***ure Electronics: Dual N-Channel 20 V 28 mOhm 16 nC 0.8 W Silicon Surface Mount Mosfet - UFDFN-6

***et Europe: Transistor MOSFET Array Dual N-CH 20V 9.3A 6-Pin uDFN2030 T/R

*** Source Electronics: MOSFET 2N-CH 20V 9A 6-UDFN / DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

***(Formerly Allied Electronics): MOSFET Dual N-Channel 20V 9A U-DFN2030-6

***ical: Trans MOSFET N-CH 20V 9A 6-Pin UDFN EP T/R

***des Inc SCT: N-Channel Mosfet, 20V VDS, 12±V VGS

***ure Electronics: P-Channel 20 V 16 mOhm 113 nC Surface Mount Power Mosfet - UDFN2523-6

***ical: Trans MOSFET P-CH 20V 9.2A Automotive 6-Pin UDFN EP T/R

***nell: MOSFET, P-CH, -20V, -9.2A, U-DFN2523; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1.2V; Power Dissipation Pd: 1W; Transistor Case Style: U-DFN2523; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans MOSFET N-CH 30V 10.7A Automotive 8-Pin SO T/R

***S: French Electronic Distributor since 1988

*** Electronics: MOSFET N-CH 30V 8A SO-8

Market price

モデル	メーカー	説明	ストック	価格
FDMW2512NZ DISTI # 512-FDMW2512NZ	ON Semiconductor	MOSFET 2.5V NCH MONOLITHIC COMON DR RoHS: Compliant	0
FDMW2512NZ	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 7.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	65743	1000:$0.2100 500:$0.2200 100:$0.2300 25:$0.2400 1:$0.2600

FDMW2512NZ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes