FQI4N80TU

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

E

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

3.9 A

Rds On - Drain-Source Resistance:

2.8 Ohms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

3.13 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

7.88 mm

Length:

10.29 mm

Series:

FQI4N80

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

4.83 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

3.8 S

Fall Time:

35 ns

Product Type:

MOSFET

Rise Time:

45 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

35 ns

Typical Turn-On Delay Time:

16 ns

Unit Weight:

0.073511 oz

Tags

FQI4N8, FQI4N, FQI4, FQI