DMN2080UCB4-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

Technology:

Si

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

4 A

Rds On - Drain-Source Resistance:

43 mOhms

Vgs th - Gate-Source Threshold Voltage:

400 mV

Vgs - Gate-Source Voltage:

5 V

Qg - Gate Charge:

7.4 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.25 W

Configuration:

Single

Channel Mode:

Enhancement

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Fall Time:

816 ns

Product Type:

MOSFET

Rise Time:

268 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

1245 ns

Typical Turn-On Delay Time:

152 ns

Tags

DMN20, DMN2, DMN