STB10NK60Z-1

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

10 A

Rds On - Drain-Source Resistance:

750 mOhms

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

50 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

115 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

SuperMESH

Packaging:

Tube

Height:

8.95 mm

Length:

10 mm

Series:

STB10NK60Z

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

4.4 mm

Brand:

STMicroelectronics

Forward Transconductance - Min:

7.8 S

Fall Time:

30 ns

Product Type:

MOSFET

Rise Time:

20 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

55 ns

Typical Turn-On Delay Time:

20 ns

Unit Weight:

0.050717 oz

Tags

STB10NK60Z, STB10NK, STB10N, STB10, STB1, STB