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IPL65R210CFDAUMA1

IPL65R210CFDAUMA1
Mfr. #:
IPL65R210CFDAUMA1
メーカー:
Infineon Technologies
説明:
MOSFET HIGH POWER BEST IN CLASS
ライフサイクル:
メーカー新製品
データシート:
IPL65R210CFDAUMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IPL65R210CFDAUMA1 詳しくは
製品属性
属性値
メーカー：
インフィニオン
製品カテゴリ：
MOSFET
テクノロジー：
Si
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
VSON-4
Vds-ドレイン-ソース間降伏電圧：
650 V
商標名：
CoolMOS
包装：
リール
高さ：
1.1 mm
長さ：
8 mm
シリーズ：
CoolMOS CFDA
幅：
8 mm
ブランド：
インフィニオンテクノロジーズ
製品タイプ：
MOSFET
ファクトリーパックの数量：
3000
サブカテゴリ：
MOSFET
パーツ番号エイリアス：
IPL65R210CFD SP000949256
Tags
IPL65R2, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-CH 700V 16.6A 4-Pin VSON T/R
***ineon SCT
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-VSON-4, RoHS
*** Electronic Components
MOSFET HIGH POWER BEST IN CLASS
***et Europe
MOS Power Transistors HV (>= 200V)
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
***ure Electronics
Single N-Channel 650V 190 mOhm 68 nC CoolMOS™ Power Mosfet - D2PAK
***p One Stop
Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) TO-263 T/R
***ineon SCT
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO263-3, RoHS
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
***icroelectronics
N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package
***ure Electronics
N-Channel 650 V 0.18 Ohm 35 nC 170 W SMT MDmesh M2 Mosfet - D2PAK
***ical
Trans MOSFET N-CH 650V 20A 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N-CH, 650V, 20A, 170W, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 170W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***icroelectronics
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in D2PAK package
***sible Micro
(CP22-1029) Transistor 650V N-Channel Mosfet D2PAK STB20N65M5
***ure Electronics
N-Channel 710 V 190 mO 36 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
***ical
Trans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 18A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ical
Trans MOSFET N-CH 650V 21A 3-Pin(2+Tab) D2PAK
***ronik
N-CH 700V 21A 180mOhm TO-263
***S
French Electronic Distributor since 1988
*** Europe
N-CH SINGLE 650V TO263
***ure Electronics
Single N-Channel 650 V 165 mOhm 86 nC CoolMOS™ Power Mosfet - ThinPAK 8x8
***ical
Trans MOSFET N-CH 650V 21.3A Automotive 4-Pin VSON EP T/R
***el Electronic
0603 2.7 nF 50 V ±5% Tolerance C0G SMT Multilayer Ceramic Capacitor
***ineon SCT
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-VSON-4, RoHS
***p One Stop
650V COOL MOS CFD2 POWER TRANSISTOR
***ronik
N-CH 650V 21,3A 165mOhm ThinPAK
*** Services
CoC and 2-years warranty / RFQ for pricing
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
***icroelectronics
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in PowerFLAT 8x8 HV package
***ical
Trans MOSFET N-CH Si 650V 15A 5-Pin Power Flat T/R
***(Formerly Allied Electronics)
MOSFET N-Channel 650V 15A PowerFLAT HV
***r Electronics
Power Field-Effect Transistor, 15A I(D), 650V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Electronic Components
MOSFET N-Ch 650V .198Ohm 15A MDmesh M5
***icroelectronics SCT
Power MOSFETs, 650V, 15A, PowerFLAT 8x8 HV, Tape and Reel
***ronik
N-CH 650V 15A 210mOhm PwFLAT8x8
*** International
MOSFET N CH 650V 15A PWRFLT8X8HV
***el Electronic
Telecom Transformer 1:1 40Term. Gull Wing SMD
***i-Key
MOSFET N-CH 650V 15A PWRFLAT HV
***et
STMICROELECTRONICS STL22N65M5 MOSFETS
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
モデル メーカー 説明 ストック 価格
IPL65R210CFDAUMA1
DISTI # 32680823		Infineon Technologies AGTrans MOSFET N-CH 650V 16.6A Automotive T/R
RoHS: Compliant		3000
  • 3000:$1.5522
IPL65R210CFDAUMA1
DISTI # IPL65R210CFDAUMA1-ND		Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$1.6315
IPL65R210CFDAUMA1
DISTI # IPL65R210CFDAUMA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPL65R210CFDAUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 12000:$1.3900
  • 18000:$1.3900
  • 30000:$1.3900
  • 6000:$1.4900
  • 3000:$1.5900
IPL65R210CFDAUMA1
DISTI # IPL65R210CFD		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPL65R210CFD)
RoHS: Compliant
Min Qty: 3000		Asia - 0
  • 150000:$1.4117
  • 75000:$1.4297
  • 30000:$1.4483
  • 15000:$1.4674
  • 9000:$1.5070
  • 6000:$1.5489
  • 3000:$1.5931
IPL65R210CFDAUMA1
DISTI # SP000949256		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP000949256)
RoHS: Compliant
Min Qty: 3000		Europe - 0
  • 30000:€1.1900
  • 18000:€1.2900
  • 12000:€1.3900
  • 6000:€1.4900
  • 3000:€1.7900
IPL65R210CFDAUMA1
DISTI # 726-IPL65R210CFDAUMA		Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS0
  • 1:$2.9500
  • 10:$2.5000
  • 100:$2.1700
  • 250:$2.0600
  • 500:$1.8500
  • 1000:$1.5600
  • 3000:$1.4800
画像 モデル 説明
IPL65R210CFDAUMA1

Mfr.#: IPL65R210CFDAUMA1

OMO.#: OMO-IPL65R210CFDAUMA1

 MOSFET HIGH POWER BEST IN CLASS
IPL65R210CFDAUMA2

Mfr.#: IPL65R210CFDAUMA2

OMO.#: OMO-IPL65R210CFDAUMA2

 MOSFET
IPL65R210CFDAUMA2

Mfr.#: IPL65R210CFDAUMA2

OMO.#: OMO-IPL65R210CFDAUMA2-INFINEON-TECHNOLOGIES

 LOW POWER_LEGACY
IPL65R210CFDAUMA1

Mfr.#: IPL65R210CFDAUMA1

OMO.#: OMO-IPL65R210CFDAUMA1-INFINEON-TECHNOLOGIES

 MOSFET HIGH POWER BEST IN CLASS
可用性
ストック:
Available
注文中:
2500
数量を入力してください:
IPL65R210CFDAUMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格（USD）
量
単価
小計金額
1
$2.95
$2.95
10
$2.50
$25.00
100
$2.17
$217.00
250
$2.06
$515.00
500
$1.85
$925.00
1000
$1.56
$1 560.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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